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Madhan Raj Dr. Eng.
Madhan Raj Dr. Eng.
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High-speed PLZT optical switches for burst and packet switching
K Nashimoto, N Tanaka, M LaBuda, D Ritums, J Dawley, M Raj, ...
2nd International Conference on Broadband Networks, 2005., 1118-1123, 2005
772005
Low threshold current density operation of GaInAsP-InP laser with multiple reflector microcavities
KC Shin, M Tamura, A Kasukawa, N Serizawa, S Kurihashi, S Tamura, ...
IEEE Photonics Technology Letters 7 (10), 1119-1121, 1995
471995
Ultralow threshold 1.3-/spl mu/m InGaAsP-InP compressive-strained multiquantum-well monolithic laser array for parallel high-density optical interconnects
K Uomi, T Tsuchiya, M Komori, A Oka, T Kawano, A Oishi
IEEE Journal of Selected Topics in Quantum Electronics 1 (2), 203-210, 1995
341995
1.5 µm wavelength DBR lasers consisting of 3λ/4-semiconductor and 3λ/4-groove buried with benzocyclobutene
MM Raj, J Wiedmann, Y Saka, H Yasumoto, S Arai
Electronics Letters 35 (16), 1335-1337, 1999
301999
Method and system for formation of PN junctions in gallium nitride based electronics
DP Bour, TR Prunty, L Romano, AP Edwards, IC Kizilyalli, H Nie, ...
US Patent 9,136,116, 2015
282015
Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH 4/H 2-Reactive Ion Etching
MM Raj, STS Toyoshima, SAS Arai
Japanese journal of applied physics 38 (7B), L811, 1999
241999
High-reflectivity semiconductor/benzocyclobutene Bragg reflector mirrors for GaInAsP/InP lasers
MM Raj, JWJ Wiedmann, STS Toyoshima, YSY Saka, KEK Ebihara, ...
Japanese Journal of Applied Physics 40 (4R), 2269, 2001
232001
GaInAsP/InP multiple short cavity laser with λ/4-air gap/semiconductor Bragg reflectors
MM Raj, KNK Numata, STS Toyoshima, SAS Arai
Japanese journal of applied physics 37 (12A), L1461, 1998
201998
Fabrication of (Pb, La)(Zr, Ti) O3 thin-film arrayed waveguide grating
M Yasumoto, T Suzuki, H Tsuda, M Raj, D Kudzuma, J Dawley, D Ritums, ...
Electronics Letters 43 (1), 24-25, 2007
182007
Method and system for a GaN vertical JFET with self-aligned source and gate
DR Disney, IC Kizilyalli, H Nie, L Romano, RJ Brown, M Raj
US Patent 8,829,574, 2014
172014
Continuous Wave Operation of 1.55 µm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
MM Raj, YSY Saka, JWJ Wiedmann, HYH Yasumoto, SAS Arai
Japanese journal of applied physics 38 (11A), L1240, 1999
151999
Benzocyclobutenes: A new class of high performance polymer
R Kirchoff, C Carriere, K Bruza, N Rondan, R Sammler
J. Macro. Sci.-Chem 28, 1079-1113, 1991
151991
Single-mode AlGaAs-GaAs lasers using lateral confinement by native-oxide layers
J Heerlein, M Grabherr, R Jager, P Unger
IEEE Photonics Technology Letters 10 (4), 498-500, 1998
141998
Singlemode operation of deeply etched coupled cavity laser with DBR facet
J Wiedmann, MM Raj, Y Saka, S Tamura, S Arai
Electronics Letters 36 (14), 1, 2000
122000
Aluminum gallium nitride etch stop layer for gallium nitride based devices
L Romano, AP Edwards, RJ Brown, DP Bour, H Nie, IC Kizilyalli, ...
US Patent 9,159,784, 2015
112015
Low dimensional quantum effects in semiconductor lasers
Y ARAKAWA
IEICE TRANSACTIONS on Electronics 75 (1), 18-25, 1992
101992
Method and system for in-situ etch and regrowth in gallium nitride based devices
DP Bour, TR Prunty, H Nie, MM Raj
US Patent 9,123,533, 2015
92015
Deeply etched semiconductor/benzocyclobutene distributed Bragg reflector laser combined with multiple cavities for 1.5-µm-wavelength single-mode operation
JWM Raj, KEK Ebihara, KMK Matsui, STS Tamura, SAS Arai
Japanese Journal of Applied Physics 40 (6R), 4031, 2001
82001
1xN ultra high speed optical switching sub-systems using
K Nashimoto, N Tanaka, M LaBuda, D Ritums, M Raj, J Dawley, ...
IEICE Technical Report; IEICE Tech. Rep. 105 (667), 21-26, 2006
72006
BroadNets 2005
K Nashimoto, N Tanaka, M LaBuda, D Ritums, J Dawley, M Raj, ...
The Fifth International Workshop on Optical Burst/Packet Switching, 195-200, 2005
72005
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