chenming hu

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Tsu-Jae King LiuUniversity of CaliforniaE-mail confirmado em eecs.berkeley.edu
Yee-Chia YeoNational University of SingaporeE-mail confirmado em nus.edu.sg
Leland ChangIBME-mail confirmado em us.ibm.com
Sayeef SalahuddinTSMC Distinguished Professor of EECS, University of California, BerkeleyE-mail confirmado em berkeley.edu
Jeffrey Bokor Professor of electrical engineering and computer sciences, University of California, BerkeleyE-mail confirmado em eecs.berkeley.edu
Mansun ChanChair Professor, HKUSTE-mail confirmado em ust.hk
Ali M NIKNEJADUC BerkeleyE-mail confirmado em berkeley.edu
Yang-Kyu ChoiProfessor of Electrical Engineering, KAISTE-mail confirmado em ee.kaist.ac.kr
AssaderaghiSiTimeE-mail confirmado em sitime.com
Darsen LuNCKUE-mail confirmado em cal.berkeley.edu
Hideki TakeuchiAtomeraE-mail confirmado em atomera.com
Dennis SylvesterProfessor of Electrical Engineering and Computer Science, University of MichiganE-mail confirmado em umich.edu
Jin HePeking universityE-mail confirmado em pku.edu.cn
Vivek SubramanianEcole polytechnique Federale de Lausanne (EPFL)E-mail confirmado em epfl.ch
Michael OrshanskyUniversity of Texas at AustinE-mail confirmado em utexas.edu
Sriramkumar VenugopalanSemiconductors ProfessionalE-mail confirmado em eecs.berkeley.edu
Yu CaoProfessor, University of MinnesotaE-mail confirmado em umn.edu
Pin SuNational Chiao Tung UniversityE-mail confirmado em faculty.nctu.edu.tw
Kaustav BanerjeeUC Santa Barbara, Stanford University, UC BerkeleyE-mail confirmado em ece.ucsb.edu
Ali JaveyProfessor of Electrical Engineering and Computer Sciences, UC BerkeleyE-mail confirmado em berkeley.edu

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chenming hu

University of California, Berkeley

E-mail confirmado em eecs.berkeley.edu - Página inicial

engineering


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm D Hisamoto, WC Lee, J Kedzierski, H Takeuchi, K Asano, C Kuo, ... IEEE transactions on electron devices 47 (12), 2320-2325, 2000	2344	2000
Hot-electron-induced MOSFET degradation-model, monitor, and improvement C Hu, SC Tam, FC Hsu, PK Ko, TY Chan, KW Terrill IEEE Journal of Solid-State Circuits 20 (1), 295-305, 1985	1961	1985
MoS2 transistors with 1-nanometer gate lengths SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ... Science 354 (6308), 99-102, 2016	1499	2016
A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors KK Hung, PK Ko, C Hu, YC Cheng IEEE Transactions on Electron Devices 37 (3), 654-665, 1990	1076	1990
Modern semiconductor devices for integrated circuits C Hu (No Title), 2010	898	2010
FinFET scaling to 10 nm gate length B Yu, L Chang, S Ahmed, H Wang, S Bell, CY Yang, C Tabery, C Ho, ... Digest. International Electron Devices Meeting,, 251-254, 2002	862	2002
Sub 50-nm finfet: Pmos X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999	844	1999
New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation Y Cao, T Sato, M Orshansky, D Sylvester, C Hu Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No …, 2000	723	2000
Hole injection SiO/sub 2/breakdown model for very low voltage lifetime extrapolation KF Schuegraf, C Hu IEEE transactions on electron devices 41 (5), 761-767, 1994	714	1994
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture C Hu, TJ King, V Subramanian, L Chang, X Huang, YK Choi, ... US Patent 6,413,802, 2002	692	2002
MOSFET modeling & BSIM3 user’s guide Y Cheng, C Hu Springer Science & Business Media, 2007	649	2007
Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020	648	2020
MOS capacitance measurements for high-leakage thin dielectrics KJ Yang, C Hu IEEE Transactions on Electron Devices 46 (7), 1500-1501, 1999	641	1999
Electrical breakdown in thin gate and tunneling oxides IC Chen, SE Holland, C Hu IEEE journal of Solid-state Circuits 20 (1), 333-342, 1985	631	1985
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI F Assaderaghi, D Sinitsky, SA Parke, J Bokor, PK Ko, C Hu IEEE Transactions on Electron Devices 44 (3), 414-422, 1997	626	1997
Sub-50 nm P-channel FinFET X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ... IEEE Transactions on Electron Devices 48 (5), 880-886, 2001	619	2001
Lucky-electron model of channel hot-electron injection in MOSFET's S Tam, PK Ko, C Hu IEEE transactions on electron devices 31 (9), 1116-1125, 1984	603	1984
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology YC Yeo, TJ King, C Hu Journal of applied physics 92 (12), 7266-7271, 2002	586	2002
Threshold voltage model for deep-submicrometer MOSFETs ZH Liu, C Hu, JH Huang, TY Chan, MC Jeng, PK Ko, YC Cheng IEEE Transactions on electron devices 40 (1), 86-95, 1993	584	1993
Immersion fluid for immersion lithography, and method of performing immersion lithography YC Yeo, BJ Lin, C Hu US Patent 7,700,267, 2010	537	2010

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