M. Twigg
M. Twigg
Naval Research Laboratory
E-mail confirmado em estd.nrl.navy.mil
Citado por
Citado por
A fluorescence resonance energy transfer-derived structure of a quantum dot-protein bioconjugate nanoassembly
IL Medintz, JH Konnert, AR Clapp, I Stanish, ME Twigg, H Mattoussi, ...
Proceedings of the National Academy of Sciences 101 (26), 9612-9617, 2004
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
DD Koleske, AE Wickenden, RL Henry, ME Twigg
Journal of crystal growth 242 (1-2), 55-69, 2002
GaN decomposition in H2 and N2 at MOVPE temperatures and pressures
DD Koleske, AE Wickenden, RL Henry, JC Culbertson, ME Twigg
Journal of crystal growth 223 (4), 466-483, 2001
Thiol-terminated di-, tri-, and tetraethylene oxide functionalized gold nanoparticles: a water-soluble, charge-neutral cluster
EE Foos, AW Snow, ME Twigg, MG Ancona
Chemistry of Materials 14 (5), 2401-2408, 2002
Resistivity control in unintentionally doped GaN films grown by MOCVD
AE Wickenden, DD Koleske, RL Henry, ME Twigg, M Fatemi
Journal of crystal growth 260 (1-2), 54-62, 2004
Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides
KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ...
Journal of Electronic Materials 29 (7), 897-900, 2000
Enhanced GaN decomposition in near atmospheric pressures
DD Koleske, AE Wickenden, RL Henry, ME Twigg, JC Culbertson, ...
Applied physics letters 73 (14), 2018-2020, 1998
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
M Peckerar, R Henry, D Koleske, A Wickenden, CR Eddy Jr, R Holm, ...
US Patent 7,198,970, 2007
Structure of stacking faults formed during the forward bias of diodes
ME Twigg, RE Stahlbush, M Fatemi, SD Arthur, JB Fedison, JB Tucker, ...
Applied physics letters 82 (15), 2410-2412, 2003
Lattice walks by long jumps
JD Wrigley, ME Twigg, G Ehrlich
The Journal of chemical physics 93 (4), 2885-2902, 1990
Surface segregation and structure of Sb-doped Si (100) films grown at low temperature by molecular beam epitaxy
KD Hobart, DJ Godbey, ME Twigg, M Fatemi, PE Thompson, DS Simons
Surface science 334 (1-3), 29-38, 1995
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys
AE Wickenden, DD Koleske, RL Henry, RJ Gorman, ME Twigg, M Fatemi, ...
Journal of Electronic Materials 29 (1), 21-26, 2000
Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers
SNG Chu, S Nakahara, ME Twigg, LA Koszi, EJ Flynn, AK Chin, ...
Journal of applied physics 63 (3), 611-623, 1988
Growth of high quality, epitaxial InSb nanowires
HD Park, SM Prokes, ME Twigg, Y Ding, ZL Wang
Journal of crystal growth 304 (2), 399-401, 2007
Low‐temperature cleaning processes for Si molecular beam epitaxy
PE Thompson, ME Twigg, DJ Godbey, KD Hobart, DS Simons
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation
JB Boos, BR Bennett, W Kruppa, D Park, J Mittereder, R Bass, ME Twigg
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging
YN Picard, ME Twigg, JD Caldwell, CR Eddy Jr, MA Mastro, RT Holm
Scripta Materialia 61 (8), 773-776, 2009
Electron channeling contrast imaging of atomic steps and threading dislocations in
YN Picard, ME Twigg, JD Caldwell, CR Eddy Jr, PG Neudeck, AJ Trunek, ...
Applied physics letters 90 (23), 234101, 2007
Evolution of GaSb epitaxy on GaAs(001)‐c(4×4)
PM Thibado, BR Bennett, ME Twigg, BV Shanabrook, LJ Whitman
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (3 …, 1996
Increasing efficiency of photoelectronic conversion by encapsulation of photosynthetic reaction center proteins in arrayed carbon nanotube electrode
N Lebedev, SA Trammell, S Tsoi, A Spano, JH Kim, J Xu, ME Twigg, ...
Langmuir 24 (16), 8871-8876, 2008
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