Marco Salvalaglio
Marco Salvalaglio
Technische Universität Dresden - Emmy Noether Group Leader
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Faceting of equilibrium and metastable nanostructures: a phase-field model of surface diffusion tackling realistic shapes
M Salvalaglio, R Backofen, R Bergamaschini, F Montalenti, A Voigt
Crystal Growth & Design 15 (6), 2787-2794, 2015
Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitectures
M Naffouti, R Backofen, M Salvalaglio, T Bottein, M Lodari, A Voigt, ...
Science advances 3 (11), eaao1472, 2017
Ge crystals on Si show their light
F Pezzoli, F Isa, G Isella, CV Falub, T Kreiliger, M Salvalaglio, ...
Physical Review Applied 1 (4), 044005, 2014
Fully coherent growth of Ge on free-standing Si (001) nanomesas
F Montalenti, M Salvalaglio, A Marzegalli, P Zaumseil, G Capellini, ...
Physical Review B 89 (1), 014101, 2014
Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures
F Isa, M Salvalaglio, YAR Dasilva, M Meduňa, M Barget, A Jung, ...
Advanced Materials 28, 884-888, 2016
Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns
G Niu, C Giovanni, G Lupina, T Niermann, M Salvalaglio, A Marzegalli, ...
ACS applied materials & interfaces 8 (3), 2017–2026, 2016
Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si
M Salvalaglio, R Bergamaschini, F Isa, A Scaccabarozzi, G Isella, ...
ACS applied materials & interfaces 7 (34), 19219-19225, 2015
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures
M Salvalaglio, F Montalenti
Journal of Applied Physics 116 (10), 104306, 2014
Morphological evolution of pit-patterned Si (001) substrates driven by surface-energy reduction
M Salvalaglio, R Backofen, A Voigt, F Montalenti
Nanoscale research letters 12 (1), 1-8, 2017
Continuum modelling of semiconductor heteroepitaxy: an applied perspective
R Bergamaschini, M Salvalaglio, R Backofen, A Voigt, F Montalenti
Advances in Physics: X 1 (3), 331-367, 2016
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale
AG Taboada, M Meduňa, M Salvalaglio, F Isa, T Kreiliger, CV Falub, ...
Journal of Applied Physics 119 (5), 055301, 2016
InAs/GaAs sharply defined axial heterostructures in self-assisted nanowires
D Scarpellini, C Somaschini, A Fedorov, S Bietti, C Frigeri, V Grillo, ...
Nano letters 15 (6), 3677-3683, 2015
Strain relaxation of GaAs/Ge crystals on patterned Si substrates
AG Taboada, T Kreiliger, CV Falub, F Isa, M Salvalaglio, L Wewior, ...
Applied Physics Letters 104 (2), 022112, 2014
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment
M Albani, L Ghisalberti, R Bergamaschini, M Friedl, M Salvalaglio, A Voigt, ...
Physical Review Materials 2 (9), 093404, 2018
Convexity splitting in a phase field model for surface diffusion
R Backofen, SM Wise, M Salvalaglio, A Voigt
Int. J. Numer. Anal. Mod. 16, 192-209, 2019
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film
M Salvalaglio, R Bergamaschini, R Backofen, A Voigt, F Montalenti, ...
Applied Surface Science 391, 33-38, 2017
Defects at grain boundaries: A coarse-grained, three-dimensional description by the amplitude expansion of the phase-field crystal model
M Salvalaglio, R Backofen, KR Elder, A Voigt
Physical Review Materials 2 (5), 053804, 2018
Controlling the energy of defects and interfaces in the amplitude expansion of the phase-field crystal model
M Salvalaglio, R Backofen, A Voigt, KR Elder
Physical Review E 96 (2), 023301, 2017
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling
M Albani, R Bergamaschini, M Salvalaglio, A Voigt, L Miglio, F Montalenti
physica status solidi (b), 1800518, 2019
Dislocation-Free SiGe/Si Heterostructures
F Montalenti, F Rovaris, R Bergamaschini, L Miglio, M Salvalaglio, ...
Crystals 8 (6), 257, 2018
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