Room temperature ferromagnetic properties of (Ga, Mn) N ML Reed, NA El-Masry, HH Stadelmaier, MK Ritums, MJ Reed, CA Parker, ...
Applied Physics Letters 79 (21), 3473-3475, 2001
875 2001 Phase separation in InGaN grown by metalorganic chemical vapor deposition NA El-Masry, EL Piner, SX Liu, SM Bedair
Applied physics letters 72 (1), 40-42, 1998
392 1998 Stacked quantum well aluminum indium gallium nitride light emitting diodes FG McIntosh, SM Bedair, NA El-Masry, JC Roberts
US Patent 5,684,309, 1997
294 1997 Violet/blue emission from epitaxial cerium oxide films on silicon substrates AH Morshed, ME Moussa, SM Bedair, R Leonard, SX Liu, N El-Masry
Applied physics letters 70 (13), 1647-1649, 1997
275 1997 Atomic layer epitaxy of III‐V binary compounds SM Bedair, MA Tischler, T Katsuyama, NA El‐Masry
Applied physics letters 47 (1), 51-53, 1985
220 1985 Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates Z Zhang, V Misra, SMA Bedair, M Ozturk
US Patent 6,709,929, 2004
198 2004 Optical band gap dependence on composition and thickness of CA Parker, JC Roberts, SM Bedair, MJ Reed, SX Liu, NA El-Masry, ...
Applied Physics Letters 75 (17), 2566-2568, 1999
191 1999 Effect of hydrogen on the indium incorporation in InGaN epitaxial films EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, ...
Applied physics letters 70 (4), 461-463, 1997
189 1997 Electrical characteristics of epitaxial CeO2 on Si(111) L Tye, NA El‐Masry, T Chikyow, P McLarty, SM Bedair
Applied physics letters 65 (24), 3081-3083, 1994
179 1994 Reaction and regrowth control of CeO2 on Si (111) surface for the silicon‐on‐insulator structure T Chikyow, SM Bedair, L Tye, NA El‐Masry
Applied physics letters 65 (8), 1030-1032, 1994
177 1994 Determination of the critical layer thickness in the InGaN/GaN heterostructures CA Parker, JC Roberts, SM Bedair, MJ Reed, SX Liu, NA El-Masry
Applied Physics Letters 75 (18), 2776-2778, 1999
161 1999 A two‐junction cascade solar‐cell structure SM Bedair, MF Lamorte, JR Hauser
Applied Physics Letters 34 (1), 38-39, 1979
143 1979 High optical quality AlInGaN by metalorganic chemical vapor deposition ME Aumer, SF LeBoeuf, FG McIntosh, SM Bedair
Applied physics letters 75 (21), 3315-3317, 1999
136 1999 Phase separation and ordering coexisting in MK Behbehani, EL Piner, SX Liu, NA El-Masry, SM Bedair
Applied physics letters 75 (15), 2202-2204, 1999
136 1999 Growth and characterization of AlInGaN quaternary alloys FG McIntosh, KS Boutros, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 68 (1), 40-42, 1996
127 1996 Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein Z Zhang, V Misra, SMA Bedair, M Ozturk
US Patent 6,914,256, 2005
124 2005 Room temperature magnetic (Ga, Mn) N: a new material for spin electronic devices ML Reed, MK Ritums, HH Stadelmaier, MJ Reed, CA Parker, SM Bedair, ...
Materials Letters 51 (6), 500-503, 2001
123 2001 Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures ME Aumer, SF LeBoeuf, SM Bedair, M Smith, JY Lin, HX Jiang
Applied Physics Letters 77 (6), 821-823, 2000
119 2000 Atomically clean surfaces by pulsed laser bombardment SM Bedair, HP Smith Jr
Journal of Applied Physics 40 (12), 4776-4781, 1969
114 1969 Critical layer thickness determination of GaN/InGaN/GaN double heterostructures MJ Reed, NA El-Masry, CA Parker, JC Roberts, SM Bedair
Applied Physics Letters 77 (25), 4121-4123, 2000
108 2000 
K.S. BoutrosE-mail confirmado em hrl.com
