| Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process D Park, S Park, K Jeong, HS Jeong, JY Song, MH Cho Scientific reports 6 (1), 19132, 2016 | 68 | 2016 |
| Optical and electrical properties of p-type transparent conducting CuAlO2 thin film DS Kim, SJ Park, EK Jeong, HK Lee, SY Choi Thin Solid Films 515 (12), 5103-5108, 2007 | 40 | 2007 |
| Phase transition characteristics and device performance of Si-doped Ge2Sb2Te5 SJ Park, IS Kim, SK Kim, SM Yoon, BG Yu, SY Choi Semiconductor science and technology 23 (10), 105006, 2008 | 35 | 2008 |
| Phase transition characteristics and nonvolatile memory device performance of ZnxSb100-x alloys TJ Park, DH Kim, SJ Park, SY Choi, SM Yoon, KJ Choi, NY Lee, BG Yu Japanese journal of applied physics 46 (6L), L543, 2007 | 25 | 2007 |
| Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires S Park, D Park, K Jeong, T Kim, SJ Park, M Ahn, WJ Yang, JH Han, ... ACS Applied Materials & Interfaces 7 (39), 21819-21827, 2015 | 24 | 2015 |
| Ultrafast phase change and long durability of BN-incorporated GeSbTe MH Jang, SJ Park, M Ahn, KS Jeong, SJ Park, MH Cho, JY Song, H Jeong Journal of Materials Chemistry C 3 (8), 1707-1715, 2015 | 22 | 2015 |
| Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure MH Jang, SJ Park, DH Lim, SJ Park, MH Cho, DH Ko, MY Heo, HC Sohn, ... Applied Physics Letters 96 (5), 2010 | 22 | 2010 |
| Characteristics of phase transition and separation in a In–Ge–Sb–Te system SJ Park, MH Jang, SJ Park, MH Cho, DH Ko Applied surface science 258 (24), 9786-9791, 2012 | 21 | 2012 |
| Effect of amorphization on the structural stability and reversibility of Ge 2 Sb 2 Te 5 and oxygen incorporated Ge 2 Sb 2 Te 5 films SJ Park, MH Jang, SJ Park, M Ahn, DB Park, DH Ko, MH Cho Journal of Materials Chemistry 22 (32), 16527-16533, 2012 | 15 | 2012 |
| Phase transition characteristics of Ge–Sb–Te pseudobinary alloys in laser irradiation measurement TJ Park, SJ Park, DH Kim, IS Kim, SK Kim, SY Choi Current Applied Physics 8 (6), 716-719, 2008 | 14 | 2008 |
| Effects of SiO2 addition on discharge characteristics of the MgO protective layer in plasma display panel HK Lee, JW Kim, SJ Park, SY Choi Thin Solid Films 515 (12), 5113-5117, 2007 | 14 | 2007 |
| The origin of the resistance change in GeSbTe films MH Jang, SJ Park, SJ Park, MH Cho, EZ Kurmaev, LD Finkelstein, ... Applied physics letters 97 (15), 2010 | 12 | 2010 |
| The phase change effect of oxygen-incorporation in GeSbTe films MH Jang, SJ Park, DH Lim, SJ Park, MH Cho, DH Ko, SJ Cho Journal of the Electrochemical Society 158 (5), H471, 2011 | 11 | 2011 |
| Effects of resonant bonding and structural distortion on the phase change properties of Sn 2 Sb 2 Se 5 M Ahn, K Jeong, S Park, S Park, H Jung, J Han, W Yang, D Kim, H Jeong, ... Journal of Materials Chemistry C 5 (31), 7820-7829, 2017 | 9 | 2017 |
| Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability MH Jang, SJ Park, DH Lim, SJ Park, MH Cho, SJ Cho, YH Cho, JH Lee Applied Physics Letters 96 (9), 2010 | 9 | 2010 |
| Structural Stability and Phase-Change Characteristics of Ge2Sb2Te5∕ SiO2 Nano-Multilayered Films MH Jang, SJ Park, DH Lim, MH Cho, YK Kim, HJ Yi, HS Kim Electrochemical and Solid-State Letters 12 (4), H151, 2009 | 8 | 2009 |
| Effect of substrate on photo-induced persistent photoconductivity in InAs nanowires T Kim, S Park, HK Kang, K Jeong, J Bae, J Song, MH Cho Applied Surface Science 458, 964-971, 2018 | 6 | 2018 |
| In situ thermal behavior of resistance drift in GeTe and Ge 2 Sb 2 Te 5 nanowires via Raman thermometry S Park, T Kim, S Hwang, D Park, M Ahn, MH Cho Journal of Materials Chemistry C 8 (32), 11032-11041, 2020 | 5 | 2020 |
| High-mobility property of crystallized In-Te chalcogenide materials SJ Park, SJ Park, D Park, M An, MH Cho, J Kim, H Na, SH Park, H Sohn Electronic Materials Letters 8, 175-178, 2012 | 5 | 2012 |
| Phase-change-induced martensitic deformation and slip system in GeSbTe MH Jang, KS Jeong, SJ Park, SJ Park, MH Cho, JY Song RSC advances 5 (45), 35792-35800, 2015 | 4 | 2015 |
