Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the same DS Kil, J Roh, HC Sohn
US Patent App. 10/819,202, 2005
447 2005 Highly scalable saddle-Fin (S-Fin) transistor for sub-50nm DRAM technology SW Park, SJ Hong, JW Kim, JG Jeong, KD Yoo, SC Moon, HC Sohn, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 32-33, 2006
277 2006 Evidence for HL Ju, HC Sohn, KM Krishnan
Physical review letters 79 (17), 3230, 1997
204 1997 Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs M Luysberg, H Sohn, A Prasad, P Specht, Z Liliental-Weber, ER Weber, ...
Journal of applied physics 83 (1), 561-566, 1998
167 1998 Magnetic inhomogeneity and colossal magnetoresistance in manganese oxides HL Ju, H Sohn
Journal of magnetism and magnetic materials 167 (3), 200-208, 1997
157 1997 Adsorptive desulfurization and denitrogenation of refinery fuels using mesoporous silica adsorbents JM Kwon, JH Moon, YS Bae, DG Lee, HC Sohn, CH Lee
ChemSusChem: Chemistry & Sustainability Energy & Materials 1 (4), 307-309, 2008
125 2008 Role of grain boundaries in double exchange manganite oxides La1− xAxMnO3 (A= Ba, Ca) HL Ju, H Sohn
Solid state communications 102 (6), 463-466, 1997
125 1997 J Vac Sci Technol H Kim
B 21, 2231, 2003
116 2003 Ga vacancies in low-temperature-grown GaAs identified by slow positrons J Gebauer, R Krause-Rehberg, S Eichler, M Luysberg, H Sohn, ER Weber
Applied physics letters 71 (5), 638-640, 1997
101 1997 Electron microscopy characterization of GaN films grown by molecular‐beam epitaxy on sapphire and SiC Z Liliental‐Weber, H Sohn, N Newman, J Washburn
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995
96 1995 Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O2 TK Eom, W Sari, KJ Choi, WC Shin, JH Kim, DJ Lee, KB Kim, H Sohn, ...
Electrochemical and Solid-State Letters 12 (11), D85, 2009
84 2009 The electronic structure of C60/ZnPc interface for organic photovoltaic device with blended layer architecture SH Park, JG Jeong, HJ Kim, SH Park, MH Cho, SW Cho, Y Yi, MY Heo, ...
Applied Physics Letters 96 (1), 2010
74 2010 Development of new TiN/ZrO2/Al2O3/ZrO2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics DS Kil, HS Song, KJ Lee, K Hong, JH Kim, KS Park, SJ Yeom, JS Roh, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 38-39, 2006
74 2006 Phase‐change memory in Bi2Te3 nanowires N Han, SI Kim, JD Yang, K Lee, H Sohn, HM So, CW Ahn, KH Yoo
Advanced Materials 23 (16), 1871, 2011
67 2011 TEM study on volume changes and void formation in Ge2Sb2Te5 films, with repeated phase changes K Do, D Lee, DH Ko, H Sohn, MH Cho
Electrochemical and Solid-State Letters 13 (8), H284, 2010
67 2010 Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films MH Jang, SJ Park, DH Lim, MH Cho, KH Do, DH Ko, HC Sohn
Applied physics letters 95 (1), 2009
60 2009 Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4 SH Kim, ES Hwang, BM Kim, JW Lee, HJ Sun, TE Hong, JK Kim, H Sohn, ...
Electrochemical and Solid-State Letters 8 (10), C155, 2005
47 2005 High current fast switching n-ZnO/p-Si diode Y Choi, K Lee, CH Park, KH Lee, JW Nam, MM Sung, KM Lee, HC Sohn, ...
Journal of Physics D: Applied Physics 43 (34), 345101, 2010
43 2010 A comparative study of the atomic-layer-deposited tungsten thin films as nucleation layers for W-plug deposition SH Kim, N Kwak, J Kim, H Sohn
Journal of the Electrochemical Society 153 (10), G887, 2006
43 2006 Improvement of the Diffusion Barrier Performance of Ru by Incorporating a WN x Thin Film for Direct-Plateable Cu Interconnects W Sari, TK Eom, CW Jeon, H Sohn, SH Kim
Electrochemical and Solid-State Letters 12 (7), H248, 2009
35 2009 