Toshio Kamiya
Toshio Kamiya
Tokyo Institute of Technology
E-mail confirmado em msl.titech.ac.jp
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono
nature 432 (7016), 488-492, 2004
69162004
Amorphous Oxide And Thin Film Transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 10/592,431, 2007
33902007
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
H Hosono, H Ota, M Orita, K Ueda, M Hirano, T Kamiya
US Patent 7,061,014, 2006
33602006
Display
H Kumomi, H Hosono, T Kamiya, K Nomura
US Patent 7,791,072, 2010
33092010
Integrated circuits utilizing amorphous oxides
K Abe, H Hosono, T Kamiya, K Nomura
US Patent 7,863,611, 2011
32942011
Field effect transistor
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,868,326, 2011
32842011
Amorphous oxide and field effect transistor
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent App. 11/269,600, 2006
32842006
Light-emitting device
T Den, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,872,259, 2011
32802011
Field effect transistor manufacturing method
H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,829,444, 2010
32792010
Sensor and image pickup device
K Saito, H Hosono, T Kamiya, K Nomura
US Patent 7,453,065, 2008
32652008
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent 10,032,930, 2018
32242018
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 12/504,158, 2009
32192009
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono
Science 300 (5623), 1269-1272, 2003
26642003
Iron-based layered superconductor: LaOFeP
Y Kamihara, H Hiramatsu, M Hirano, R Kawamura, H Yanagi, T Kamiya, ...
Journal of the American Chemical Society 128 (31), 10012-10013, 2006
15582006
Present status of amorphous In–Ga–Zn–O thin-film transistors
T Kamiya, K Nomura, H Hosono
Science and Technology of Advanced Materials, 2010
15202010
Amorphous oxide semiconductors for high-performance flexible thin-film transistors
K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono
Japanese journal of applied physics 45 (5S), 4303, 2006
13162006
High-mobility thin-film transistor with amorphous channel fabricated by room temperature rf-magnetron sputtering
H Yabuta, M Sano, K Abe, T Aiba, T Den, H Kumomi, K Nomura, T Kamiya, ...
Applied physics letters 89 (11), 112123, 2006
12262006
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline films
K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono
Applied Physics Letters 85 (11), 1993-1995, 2004
9092004
Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,601,984, 2009
7802009
42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs
R Hayashi, A Sato, M Ofuji, K Abe, H Yabuta, M Sano, H Kumomi, ...
SID Symposium Digest of Technical Papers 39 (1), 621-624, 2008
6642008
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