Toshio Kamiya
Toshio Kamiya
Tokyo Institute of Technology
E-mail confirmado em msl.titech.ac.jp
TítuloCitado porAno
Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K
Y Kamihara, T Watanabe, M Hirano, H Hosono
Journal of the American Chemical Society 130 (11), 3296-3297, 2008
8872*2008
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono
Nature 432 (7016), 488, 2004
65692004
Amorphous Oxide And Thin Film Transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 10/592,431, 2007
35092007
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
H Hosono, H Ota, M Orita, K Ueda, M Hirano, T Kamiya
US Patent 7,061,014, 2006
34772006
Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,601,984, 2009
34542009
Display
H Kumomi, H Hosono, T Kamiya, K Nomura
US Patent 7,791,072, 2010
34232010
Integrated circuits utilizing amorphous oxides
K Abe, H Hosono, T Kamiya, K Nomura
US Patent 7,863,611, 2011
34112011
Field effect transistor
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,868,326, 2011
34042011
Light-emitting device
T Den, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,872,259, 2011
33962011
Field effect transistor manufacturing method
H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,829,444, 2010
33952010
Sensor and image pickup device
K Saito, H Hosono, T Kamiya, K Nomura
US Patent 7,453,065, 2008
33792008
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 12/504,158, 2009
33412009
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 12/504,116, 2009
33402009
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono
Science 300 (5623), 1269-1272, 2003
25902003
Present status of amorphous In–Ga–Zn–O thin-film transistors
T Kamiya, K Nomura, H Hosono
Science and Technology of Advanced Materials 11 (4), 044305, 2010
14282010
Amorphous oxide semiconductors for high-performance flexible thin-film transistors
K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono
Japanese journal of applied physics 45 (5S), 4303, 2006
12912006
High-mobility thin-film transistor with amorphous channel fabricated by room temperature rf-magnetron sputtering
H Yabuta, M Sano, K Abe, T Aiba, T Den, H Kumomi, K Nomura, T Kamiya, ...
Applied physics letters 89 (11), 112123, 2006
11802006
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline films
K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono
Applied Physics Letters 85 (11), 1993-1995, 2004
8942004
42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs
R Hayashi, A Sato, M Ofuji, K Abe, H Yabuta, M Sano, H Kumomi, ...
SID Symposium Digest of Technical Papers 39 (1), 621-624, 2008
6582008
P‐29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States
HH Hsieh, T Kamiya, K Nomura, H Hosono, CC Wu
SID Symposium Digest of Technical Papers 39 (1), 1277-1280, 2008
6102008
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