GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts SJ Chang, ML Lee, JK Sheu, WC Lai, YK Su, CS Chang, CJ Kao, GC Chi, ...
IEEE Electron Device Letters 24 (4), 212-214, 2003
102 2003 Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers JK Sheu, CC Yang, SJ Tu, KH Chang, ML Lee, WC Lai, LC Peng
IEEE electron device letters 30 (3), 225-227, 2009
100 2009 Nonalloyed ML Lee, JK Sheu, CC Hu
Applied Physics Letters 91 (18), 182106, 2007
92 2007 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer ML Lee, JK Sheu, WC Lai, YK Su, SJ Chang, CJ Kao, CJ Tun, MG Chen, ...
Journal of applied physics 94 (3), 1753-1757, 2003
57 2003 JK Sheu, CM Tsai, ML Lee, SC Shei, WC Lai
Applied physics letters 88 (11), 113505, 2006
54 2006 Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads JK Sheu, IH Hung, WC Lai, SC Shei, ML Lee
Applied Physics Letters 93 (10), 103507, 2008
53 2008 Ga-doped ZnO transparent conductive oxide films applied to GaN-based light-emitting diodes for improving light extraction efficiency JK Sheu, ML Lee, YS Lu, KW Shu
IEEE Journal of Quantum Electronics 44 (12), 1211-1218, 2008
49 2008 Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes SC Shei, JK Sheu, CM Tsai, WC Lai, ML Lee, CH Kuo
Japanese journal of applied physics 45 (4R), 2463, 2006
46 2006 Planar GaN p -GaN JK Sheu, ML Lee, LS Yeh, CJ Kao, CJ Tun, MG Chen, GC Chi, SJ Chang, ...
Applied physics letters 81 (22), 4263-4265, 2002
46 2002 Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers CC Yang, JK Sheu, XW Liang, MS Huang, ML Lee, KH Chang, SJ Tu, ...
Applied Physics Letters 97 (2), 021113, 2010
43 2010 Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to JK Sheu, ML Lee, CJ Tun, SW Lin
Applied physics letters 88 (4), 043506, 2006
43 2006 Design of Hole-Blocking and Electron-Blocking Layers in Alx 1–x N-Based UV Light-Emitting Diodes YH Shih, JY Chang, JK Sheu, YK Kuo, FM Chen, ML Lee, WC Lai
IEEE Transactions on Electron Devices 63 (3), 1141-1147, 2016
42 2016 High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer ML Lee, TS Mue, FW Huang, JH Yang, JK Sheu
Optics Express 19 (13), 12658-12663, 2011
42 2011 Characterization of Si implants in p-type GaN JK Sheu, ML Lee, CJ Tun, CJ Kao, LS Yeh, SJ Chang, GC Chi
IEEE Journal of selected topics in quantum electronics 8 (4), 767-772, 2002
42 2002 InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid JK Sheu, PH Liao, TC Huang, KJ Chiang, WC Lai, ML Lee
Solar Energy Materials and Solar Cells 166, 86-90, 2017
39 2017 Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer CH Jang, JK Sheu, CM Tsai, SJ Chang, WC Lai, ML Lee, TK Ko, CF Shen, ...
IEEE Journal of Quantum Electronics 46 (4), 513-517, 2010
37 2010 Light emitting diode and data transmission and reception apparatus ML Lee
US Patent 9,905,725, 2018
36 2018 Deep level defect in Si-implanted XD Chen, Y Huang, S Fung, CD Beling, CC Ling, JK Sheu, ML Lee, ...
Applied physics letters 82 (21), 3671-3673, 2003
36 2003 Inverted KH Chang, JK Sheu, ML Lee, SJ Tu, CC Yang, HS Kuo, JH Yang, WC Lai
Applied Physics Letters 97 (1), 013502, 2010
33 2010 Photodetectors formed by an indium tin oxide/zinc oxide/ ML Lee, PF Chi, JK Sheu
Applied Physics Letters 94 (1), 013512, 2009
33 2009 