Paul J Simmonds
TítuloCitado porAno
Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection
HW Li, BE Kardynał, P See, AJ Shields, P Simmonds, HE Beere, ...
Applied Physics Letters 91 (7), 073516-073516-3, 2007
GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays
BC Juang, RB Laghumavarapu, BJ Foggo, PJ Simmonds, A Lin, B Liang, ...
Applied Physics Letters 106 (11), 111101, 2015
Structural and optical properties of InAs/AlAsSb quantum dots with GaAs (Sb) cladding layers
PJ Simmonds, R Babu Laghumavarapu, M Sun, A Lin, CJ Reyner, ...
Applied Physics Letters 100 (24), 243108, 2012
Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells
J Simon, S Tomasulo, PJ Simmonds, M Romero, ML Lee
Journal of Applied Physics 109 (1), 013708, 2011
Photoluminescence from In0.5Ga0.5P/GaP quantum dots coupled to photonic crystal cavities
K Rivoire, S Buckley, Y Song, P Simmonds, ML Lee, J Vučković
Frontiers in Optics 2011/Laser Science XXVII, OSA Technical Digest (Optical …, 2011
Strain-driven growth of GaAs (111) quantum dots with low fine structure splitting
CD Yerino, PJ Simmonds, B Liang, D Jung, C Schneider, S Unsleber, ...
Applied Physics Letters 105 (25), 251901, 2014
Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain
PJ Simmonds, CD Yerino, M Sun, B Liang, DL Huffaker, VG Dorogan, ...
ACS nano 7 (6), 5017-5023, 2013
Self-assembled In 0.5 Ga 0.5 As quantum dots on GaP
Y Song, PJ Simmonds, ML Lee
Applied Physics Letters 97, 223110, 2010
Quantum transport in In 0.75 Ga 0.25 As quantum wires
PJ Simmonds, F Sfigakis, HE Beere, DA Ritchie, M Pepper, D Anderson, ...
Appl. Phys. Lett 92, 152108, 2008
Tensile-strained growth on low-index GaAs
PJ Simmonds, M Larry Lee
Journal of Applied Physics 112 (5), 054313, 2012
Self-assembly on (111)-oriented III-V surfaces
PJ Simmonds, M Larry Lee
Applied Physics Letters 99 (12), 123111, 2011
Tensile strained island growth at step-edges on GaAs (110)
PJ Simmonds, ML Lee
Applied Physics Letters 97 (15), 153101, 2010
Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111) A,(111) B, and (110)
CD Yerino, B Liang, DL Huffaker, PJ Simmonds, ML Lee
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
HM Ji, B Liang, PJ Simmonds, BC Juang, T Yang, RJ Young, DL Huffaker
Applied Physics Letters 106 (10), 103104, 2015
Improved quantum dot stacking for intermediate band solar cells using strain compensation
PJ Simmonds, M Sun, RB Laghumavarapu, B Liang, AG Norman, JW Luo, ...
Nanotechnology 25 (44), 445402, 2014
Molecular beam epitaxy of metamorphic solar cells on mixed anion graded buffers
S Tomasulo, J Simon, PJ Simmonds, J Biagiotti, ML Lee
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
FAST TRACK COMMUNICATION: Bychkov Rashba dominated band structure in an In0. 75Ga0. 25As In0. 75Al0. 25As device with spin-split carrier densities of< 1011 cm-2
SN Holmes, PJ Simmonds, HE Beere, F Sfigakis, I Farrer, DA Ritchie, ...
Journal of Physics Condensed Matter 20, 2207, 2008
Effects of GaAs (Sb) cladding layers on InAs/AlAsSb quantum dots
M Sun, PJ Simmonds, RB Laghumavarapu, A Lin, CJ Reyner, HS Duan, ...
Applied Physics Letters 102 (2), 023107, 2013
Spin-orbit coupling in an In0. 52Ga0. 48As quantum well with two populated subbands
PJ Simmonds, SN Holmes, HE Beere, DA Ritchie
Journal of Applied Physics 103 (12), 124506, 2008
Technology development & design for 22 nm InGaAs/InP-channel MOSFETs
MJW Rodwell, M Wistey, U Singisetti, G Burek, A Gossard, S Stemmer, ...
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International …, 2008
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20