Max Migliorato
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Citado por
Stranski-Krastanow transition and epitaxial island growth
AG Cullis, DJ Norris, T Walther, MA Migliorato, M Hopkinson
Physical Review B 66 (8), 081305, 2002
Atomistic simulation of strain relaxation in InxGa1− xAs/GaAs quantum dots with nonuniform composition
MA Migliorato, AG Cullis, M Fearn, JH Jefferson
Physical Review B 65 (11), 115316, 2002
Second-order piezoelectricity in wurtzite III-N semiconductors
J Pal, G Tse, V Haxha, MA Migliorato, S Tomić
Physical Review B 84 (8), 085211, 2011
Optimized Tersoff potential parameters for tetrahedrally bonded III-V semiconductors
D Powell, MA Migliorato, AG Cullis
Physical Review B 75 (11), 115202, 2007
Manipulation of the homogeneous linewidth of an individual In (Ga) As quantum dot
R Oulton, JJ Finley, AD Ashmore, IS Gregory, DJ Mowbray, MS Skolnick, ...
Physical Review B 66 (4), 045313, 2002
Under pressure: control of strain, phonons and bandgap opening in rippled graphene
U Monteverde, J Pal, MA Migliorato, M Missous, U Bangert, R Zan, ...
Carbon 91, 266-274, 2015
Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots
MA Migliorato, LR Wilson, DJ Mowbray, MS Skolnick, M Al-Khafaji, ...
Journal of Applied Physics 90 (12), 6374-6378, 2001
Piezoelectric field enhancement in III–V core–shell nanowires
HYS Al-Zahrani, J Pal, MA Migliorato, G Tse, D Yu
Nano Energy 14, 382-391, 2015
Composition and strain dependence of the piezoelectric coefficients in InxGa1− xAs alloys
MA Migliorato, D Powell, AG Cullis, T Hammerschmidt, GP Srivastava
Physical Review B 74 (24), 245332, 2006
Non-linear piezoelectricity in wurtzite ZnO semiconductors
HYS Al-Zahrani, J Pal, MA Migliorato
Nano Energy 2 (6), 1214-1217, 2013
Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer
V Haxha, I Drouzas, JM Ulloa, M Bozkurt, PM Koenraad, DJ Mowbray, ...
Physical Review B 80 (16), 165334, 2009
Using quantum confinement to uniquely identify devices
J Roberts, IE Bagci, MAM Zawawi, J Sexton, N Hulbert, YJ Noori, ...
Scientific reports 5 (1), 1-8, 2015
Influence of composition on the piezoelectric effect and on the conduction band energy levels of InxGa1− xAs/GaAs quantum dots
MA Migliorato, D Powell, SL Liew, AG Cullis, P Navaretti, MJ Steer, ...
Journal of applied physics 96 (9), 5169-5172, 2004
Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors
G Tse, J Pal, U Monteverde, R Garg, V Haxha, MA Migliorato, S Tomić
Journal of Applied Physics 114 (7), 073515, 2013
Anisotropy of the electron energy levels in InxGa1− xAs/GaAs quantum dots with non uniform composition
MA Migliorato, D Powell, EA Zibik, LR Wilson, M Fearn, JH Jefferson, ...
Physica E: Low-dimensional Systems and Nanostructures 26 (1), 436-440, 2005
A review of non linear piezoelectricity in semiconductors
MA Migliorato, J Pal, R Garg, G Tse, HYS Al-Zahrani, U Monteverde, ...
AIP Conference Proceedings 1590 (1), 32-41, 2014
Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management
J Pal, MA Migliorato, CK Li, YR Wu, BG Crutchley, IP Marko, SJ Sweeney
Journal of Applied Physics 114 (7), 073104, 2013
Importance of non linear piezoelectric effect in Wurtzite III-N semiconductors
J Pal, G Tse, V Haxha, MA Migliorato, S Tomić
Optical and Quantum Electronics 44 (3), 195-203, 2012
Tunability of the piezoelectric fields in strained III-V semiconductors
R Garg, A Hüe, V Haxha, MA Migliorato, T Hammerschmidt, ...
Applied Physics Letters 95 (4), 041912, 2009
Visible Spectrum Quantum Light Sources Based on InxGa1–xN/GaN Quantum Dots
S Tomic, J Pal, MA Migliorato, RJ Young, N Vukmirovic
ACS Photonics 2 (7), 958-963, 2015
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