| Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes GR Yazdi, R Vasiliauskas, T Iakimov, A Zakharov, M Syväjärvi, ... Carbon 57, 477-484, 2013 | 101 | 2013 |
| Polarization doping of graphene on silicon carbide S Mammadov, J Ristein, RJ Koch, M Ostler, C Raidel, M Wanke, ... 2D Materials 1 (3), 035003, 2014 | 67 | 2014 |
| Microfluidic production of alginate hydrogel particles for antibody encapsulation and release L Mazutis, R Vasiliauskas, DA Weitz Macromolecular bioscience 15 (12), 1641-1646, 2015 | 58 | 2015 |
| Simple microfluidic approach to fabricate monodisperse hollow microparticles for multidrug delivery R Vasiliauskas, D Liu, S Cito, H Zhang, MA Shahbazi, T Sikanen, ... ACS applied materials & interfaces 7 (27), 14822-14832, 2015 | 48 | 2015 |
| Effect of initial substrate conditions on growth of cubic silicon carbide R Vasiliauskas, M Marinova, M Syväjärvi, R Liljedahl, G Zoulis, J Lorenzzi, ... Journal of crystal growth 324 (1), 7-14, 2011 | 35 | 2011 |
| Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si-and C-face of 3C-SiC (111) V Darakchieva, A Boosalis, AA Zakharov, T Hofmann, M Schubert, ... Applied Physics Letters 102 (21), 213116, 2013 | 31 | 2013 |
| Nucleation control of cubic silicon carbide on 6H-substrates R Vasiliauskas, M Marinova, P Hens, P Wellmann, M Syväjärvi, ... Crystal growth & design 12 (1), 197-204, 2012 | 27 | 2012 |
| Progress in 3C-SiC growth and novel applications R Yakimova, R Vasiliauskas, J Eriksson, M Syväjärvi Materials Science Forum 711, 3-10, 2012 | 24 | 2012 |
| Epitaxial growth of thin films J Palisaitis, R Vasiliauskas Physics of Advanced Materials Winter School, 1-16, 2008 | 23 | 2008 |
| Cubic SiC formation on the C-face of 6H–SiC (0 0 0 1) substrates R Vasiliauskas, S Juillaguet, M Syväjärvi, R Yakimova Journal of crystal growth 348 (1), 91-96, 2012 | 20 | 2012 |
| Sublimation growth and structural characterization of 3C-SiC on hexagonal and cubic SiC seeds R Vasiliauskas, M Marinova, M Syväjärvi, A Mantzari, A Andreadou, ... Materials Science Forum 645, 175-178, 2010 | 13 | 2010 |
| Two-dimensional nucleation of cubic and 6h silicon carbide R Vasiliauskas, M Syväjärvi, M Beshkova, R Yakimova Materials Science Forum 615, 189-192, 2009 | 11 | 2009 |
| A. Mant zari, A. Andreadou, J. Lorenzzi, G. Ferro, EK Poly chroniadis, and R. Yakimova R Vasiliauskas, M Marinova, M Syväjärvi Mater. Sci. Forum 645 (648), 175, 2010 | 10 | 2010 |
| Impact of extended defects on Hall and magnetoresistivity effects in cubic silicon carbide R Vasiliauskas, A Mekys, P Malinovskis, S Juillaguet, M Syväjärvi, ... Journal of Physics D: Applied Physics 45 (22), 225102, 2012 | 9 | 2012 |
| Influence of twin boundary orientation on magnetoresistivity effect in free standing 3C–SiC R Vasiliauskas, A Mekys, P Malinovskis, M Syväjärvi, J Storasta, ... Materials Letters 74, 203-205, 2012 | 8 | 2012 |
| Fabrication of free-standing AlN crystals by controlled microrod growth GR Yazdi, R Vasiliauskas, M Syväjärvi, R Yakimova Journal of crystal growth 310 (5), 935-939, 2008 | 8 | 2008 |
| Structural properties of 3C-SiC grown by sublimation epitaxy M Beshkova, M Syväjärvi, R Vasiliauskas, J Birch, R Yakimova Materials Science Forum 615, 181-184, 2009 | 6 | 2009 |
| Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates R Vasiliauskas, M Marinova, M Syväjärvi, EK Polychroniadis, R Yakimova Journal of crystal growth 395, 109-115, 2014 | 5 | 2014 |
| Thickness uniformity and electron doping in epitaxial graphene on SiC J Eriksson, D Puglisi, R Vasiliauskas, A Lloyd Spetz, R Yakimova Materials Science Forum 740, 153-156, 2013 | 3 | 2013 |
| Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seeds G Zoulis, J Lorenzi, R Vasiliauskas, N Jegenyes, M Beshkova, ... | 3 | 2009 |
