| Best practices for compact modeling in Verilog-A CC McAndrew, GJ Coram, KK Gullapalli, JR Jones, LW Nagel, AS Roy, ... IEEE Journal of the Electron Devices Society 3 (5), 383-396, 2015 | 123 | 2015 |
| Compact modeling of thermal noise in the MOS transistor AS Roy, CC Enz IEEE transactions on electron devices 52 (4), 611-614, 2005 | 99 | 2005 |
| A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET AS Roy, JM Sallese, CC Enz Solid-State Electronics 50 (4), 687-693, 2006 | 83 | 2006 |
| Noise modeling methodologies in the presence of mobility degradation and their equivalence AS Roy, CC Enz, JM Sallese IEEE transactions on electron devices 53 (2), 348-355, 2006 | 49 | 2006 |
| Capacitance compact model for ultrathin low-electron-effective-mass materials S Mudanai, A Roy, R Kotlyar, T Rakshit, M Stettler IEEE transactions on electron devices 58 (12), 4204-4211, 2011 | 46 | 2011 |
| Analytical modeling of large-signal cyclo-stationary low-frequency noise with arbitrary periodic input AS Roy, CC Enz IEEE transactions on electron devices 54 (9), 2537-2545, 2007 | 41 | 2007 |
| IEEE TED AS Roy IEEE TED 53 (12), 3063-3070, 2006 | 34 | 2006 |
| Source–drain partitioning in MOSFET AS Roy, CC Enz, JM Sallese IEEE transactions on electron devices 54 (6), 1384-1393, 2007 | 30 | 2007 |
| Mechanism of long-channel drain-induced barrier lowering in halo MOSFETs AS Roy, SP Mudanai, M Stettler IEEE Transactions on Electron Devices 58 (4), 979-984, 2011 | 26 | 2011 |
| Compact model for ultrathin low electron effective mass double gate MOSFET AS Roy, SP Mudanai, D Basu, MA Stettler IEEE Transactions on Electron Devices 61 (2), 308-313, 2013 | 22 | 2013 |
| New approach to model nonquasi-static (NQS) effects for MOSFETs. Part I: Large-signal analysis AS Roy, JM Vasi, MB Patil IEEE Transactions on Electron Devices 50 (12), 2393-2400, 2003 | 22 | 2003 |
| Compact modeling of temperature-dependent gate-induced drain leakage including low-field effects CK Dabhi, AS Roy, YS Chauhan IEEE Transactions on Electron Devices 66 (7), 2892-2897, 2019 | 20 | 2019 |
| Compact modeling of gate sidewall capacitance of DG-MOSFET AS Roy, CC Enz, JM Sallese IEEE transactions on electron devices 53 (10), 2655-2657, 2006 | 20 | 2006 |
| Compact modeling of magnetic tunneling junctions AS Roy, A Sarkar, SP Mudanai IEEE Transactions on Electron Devices 63 (2), 652-658, 2016 | 19 | 2016 |
| Noise modeling in lateral nonuniform MOSFET AS Roy, CC Enz, JM Sallese IEEE transactions on electron devices 54 (8), 1994-2001, 2007 | 18 | 2007 |
| A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: Small-signal analysis AS Roy, JM Vasi, MB Patil IEEE Transactions on Electron Devices 50 (12), 2401-2407, 2003 | 14 | 2003 |
| Critical discussion on the flat band perturbation technique for calculating low-frequency noise AS Roy, CC Enz IEEE transactions on electron devices 53 (10), 2664-2667, 2006 | 13 | 2006 |
| Partitioning scheme in lateral asymmetric MOST AS Roy, YS Chauhan, JM Sallese, CC Enz, AM Ionescu, M Declercq 2006 European Solid-State Device Research Conference, 307-310, 2006 | 13 | 2006 |
| Noise and small-signal modeling of nanoscale MOSFETs AS Roy EPFL, 2007 | 12 | 2007 |
| EKV3 compact MOSFET model documentation, model version 301.02 A Bazigos, M Bucher, F Krummenacher, JM Sallese, AS Roy, C Enz Technical Report, 2008 | 11 | 2008 |
