Comprehensive understanding of the HZO-based n/pFeFET operation and device performance enhancement strategy SH Kuk, SM Han, BH Kim, SH Baek, JH Han, S Kim
2021 IEEE International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2021
18 2021 An investigation of HZO-based n/p-FeFET operation mechanism and improved device performance by the electron detrapping mode SH Kuk, SM Han, BH Kim, SH Baek, JH Han, SH Kim
IEEE Transactions on Electron Devices 69 (4), 2080-2087, 2022
16 2022 Dielectric-engineered high-speed, low-power, highly reliable charge trap flash-based synaptic device for neuromorphic computing beyond inference JP Kim, SK Kim, S Park, S Kuk, T Kim, BH Kim, SH Ahn, YH Cho, ...
Nano Letters 23 (2), 451-461, 2023
11 2023 Oxygen scavenging of HfZrO 2-based capacitors for improving ferroelectric properties BH Kim, S Kuk, SK Kim, JP Kim, DM Geum, SH Baek, SH Kim
Nanoscale Advances 4 (19), 4114-4121, 2022
8 2022 Logic and memory ferroelectric field-effect-transistor using reversible and irreversible domain wall polarization SH Kuk, S Han, DH Lee, BH Kim, J Shim, MH Park, JH Han, SH Kim
IEEE Electron Device Letters 44 (1), 36-39, 2022
4 2022 IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs BH Kim, SK Kim, S Kuk, YJ Suh, J Jeong, JP Kim, DM Geum, S Kim
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2 2023 Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si SH Kuk, JH Han, BH Kim, JP Kim, SH Kim
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
2 2023 Oxygen Scavenging in HfZrOx ‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, DM Geum, SH Baek, ...
Advanced Electronic Materials 9 (5), 2201257, 2023
2 2023 Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, DM Geum, SH Baek, ...
IEEE Transactions on Electron Devices 70 (4), 1996-2000, 2023
2 2023 Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, CJ Lee, DM Geum, ...
Advanced Electronic Materials 10 (1), 2300327, 2024
1 2024 Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND SH Kuk, JH Han, BH Kim, J Kim, SH Kim
2023 IEEE International Memory Workshop (IMW), 1-4, 2023
1 2023 Heavily Doped Channel Carrier Mobility in -Ga O Lateral Accumulation MOSFET SH Kuk, S Choi, HY Kim, K Ko, J Jeong, DM Geum, JH Han, JH Park, ...
IEEE Transactions on Electron Devices, 2024
2024 Large Polarization of Hf0.5 Zr0.5 Ox Ferroelectric Film on InGaAs with Electric-Field Cycling and Annealing Temperature Engineering YJ Suh, J Jeong, BH Kim, SH Kuk, SK Kim, JP Kim, S Kim
IEEE Electron Device Letters, 2024
2024 Examination of Ferroelectric FET for “Cold” Nonvolatile Memory SH Kuk, SM Han, BH Kim, JP Kim, SK Kim, SY Ahn, MH Park, JH Han, ...
IEEE Transactions on Electron Devices, 2023
2023 Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films J Jeon, SH Kuk, AJ Cho, SH Baek, SH Kim, SK Kim
Applied Physics Letters 122 (23), 2023
2023 Comprehensive understanding of HZO-Based n/p-channel FEFET operation mechanism and improved device performance by the electron de-trapping mode SH Kuk
한국과학기술원, 2022
2022