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Renato Giacomini
Renato Giacomini
Verified email at fei.edu.br - Homepage
Title
Cited by
Cited by
Year
Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts
R Giacomini, JA Martino
Journal of the Electrochemical Society 153 (3), G218, 2006
392006
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
R Giacomini, JA Martino
Journal of the Electrochemical Society 155 (4), H213, 2008
382008
Ionizing radiation hardness tests of GaN HEMTs for harsh environments
ACV Bôas, MAA de Melo, RBB Santos, R Giacomini, NH Medina, ...
Microelectronics Reliability 116, 114000, 2021
272021
Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures
C Novo, R Giacomini, R Doria, A Afzalian, D Flandre
Semiconductor Science and Technology 29 (7), 075008, 2014
272014
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
RT Bühler, R Giacomini, MA Pavanello, JA Martino
Semiconductor science and technology 24 (11), 115017, 2009
222009
Ionizing radiation effects on a COTS low-cost RISC microcontroller
FGH Leite, RBB Santos, NH Medina, VAP Aguiar, RC Giacomini, N Added, ...
2017 18th IEEE Latin American Test Symposium (LATS), 1-4, 2017
202017
Bio-Amplifier based on MOS bipolar Pseudo-Resistors: A New Approach using its non-linear characteristic
PL Benko, M Galeti, CF Pereira, JC Lucchi, RC Giacomini
Journal of Integrated Circuits and Systems 11 (2), 132-139, 2016
152016
Fin shape influence on the analog performance of standard and strained MuGFETs
RT Bühler, JA Martino, PGD Agopian, R Giacomini, E Simoen, C Claeys
2010 IEEE International SOI Conference (SOI), 1-2, 2010
122010
Transitory recovery time of bio-potential amplifiers that include CMOS pseudo-resistors
CF Pereira, PL Benko, JC Lucchi, RC Giacomini
2014 International Caribbean Conference on Devices, Circuits and Systems …, 2014
112014
Innovative approach for electrical characterisation of pseudo‐resistors
PL Benko, M Galeti, CF Pereira, JC Lucchi, R Giacomini
Electronics Letters 52 (25), 2031-2032, 2016
102016
Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
C Novo, R Giacomini, A Afzalian, D Flandre
ECS Transactions 53 (5), 121, 2013
102013
Teraohm pseudo-resistor experimental characterization aiming at implementation of bio-amplifiers
CF Pereira, PL Benko, JC Lucchi, RC Giacomini
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2016
92016
Experimental study and modeling of pseudo-resistor's non-linearity
CF Pereira, PL Benko, M Galeti, JC Lucchi, RC Giacomini
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2017
82017
First successful SEE measurements with heavy ions in Brazil
NH Medina, MAG Silveira, N Added, VAP Aguiar, R Giacomini, ...
2014 IEEE Radiation Effects Data Workshop (REDW), 1-3, 2014
82014
Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs
AL Perin, R Giacomini
2012 IEEE International SOI Conference (SOI), 1-2, 2012
82012
An analytical estimation model for the spreading resistance of Double-Gate FinFETs
CT Malheiro, ASN Pereira, R Giacomini
2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012
82012
Filter-free color pixel sensor using gated PIN photodiodes and machine learning techniques
JB Junior, A Pereira, R Buhler, A Perin, C Novo, M Galeti, J Oliveira, ...
Microelectronics Journal 120, 105337, 2022
72022
Assessment of ionizing radiation hardness of a GaN field-effect transistor
ACV Bôas, MAA de Melo, RBB Santos, RC Giacomini, NH Medina, ...
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2019
72019
Cross-section shape influence on trapezoidal triple-gate SOI MOSFET analog parameters
RT Bühler, JA Martino, MA Pavanello, R Giacomini
Proceedings of EuroSOI 2009 1, 49-50, 2009
72009
Influence of non-vertical sidewall on FinFET threshold voltage
R Giacomini, JA Martino
ECS Transactions 4 (1), 275, 2007
72007
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Articles 1–20