Piotr Perlin
Piotr Perlin
Institute of High Pressure Physics
E-mail confirmado em unipress.waw.pl - Página inicial
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Citado por
Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure
P Perlin, C Jauberthie-Carillon, JP Itie, A San Miguel, I Grzegory, A Polian
Physical Review B 45 (1), 83, 1992
“Blue” temperature-induced shift and band-tail emission in InGaN-based light sources
PG Eliseev, P Perlin, J Lee, M Osiński
Applied physics letters 71 (5), 569-571, 1997
Towards the identification of the dominant donor in GaN
P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ...
Physical review letters 75 (2), 296, 1995
Large, nitrogen-induced increase of the electron effective mass in
C Skierbiszewski, P Perlin, P Wisniewski, W Knap, T Suski, ...
Applied Physics Letters 76 (17), 2409-2411, 2000
Pressure induced deep gap state of oxygen in GaN
C Wetzel, T Suski, JW Ager Iii, ER Weber, EE Haller, S Fischer, BK Meyer, ...
Physical review letters 78 (20), 3923, 1997
Thermal expansion of gallium nitride
M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ...
Journal of applied physics 76 (8), 4909-4911, 1994
Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties
P Perlin, I Gorczyca, NE Christensen, I Grzegory, H Teisseyre, T Suski
Physical Review B 45 (23), 13307, 1992
Mechanism of yellow luminescence in GaN
T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ...
Applied physics letters 67 (15), 2188-2190, 1995
Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN
P Perlin, J Camassel, W Knap, T Taliercio, JC Chervin, T Suski, I Grzegory, ...
Applied Physics Letters 67 (17), 2524-2526, 1995
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ...
Journal of applied physics 76 (4), 2429-2434, 1994
Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes
P Perlin, M Osiński, PG Eliseev, VA Smagley, J Mu, M Banas, P Sartori
Applied physics letters 69 (12), 1680-1682, 1996
Determination of the effective mass of GaN from infrared reflectivity and Hall effect
P Perlin, E Litwin‐Staszewska, B Suchanek, W Knap, J Camassel, T Suski, ...
Applied physics letters 68 (8), 1114-1116, 1996
Raman-scattering studies of aluminum nitride at high pressure
P Perlin, A Polian, T Suski
Physical Review B 47 (5), 2874, 1993
InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy
P Perlin, C Kisielowski, V Iota, BA Weinstein, L Mattos, NA Shapiro, ...
Applied physics letters 73 (19), 2778-2780, 1998
Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate
P Perlin, L Mattos, NA Shapiro, J Kruger, WS Wong, T Sands, NW Cheung, ...
Journal of Applied Physics 85 (4), 2385-2389, 1999
Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
P Perlin, V Iota, BA Weinstein, P Wiśniewski, T Suski, PG Eliseev, ...
Applied physics letters 70 (22), 2993-2995, 1997
Visible light communications using a directly modulated 422 nm GaN laser diode
S Watson, M Tan, SP Najda, P Perlin, M Leszczynski, G Targowski, ...
Optics letters 38 (19), 3792-3794, 2013
Lattice constants, thermal expansion and compressibility of gallium nitride
M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ...
Journal of Physics D: Applied Physics 28 (4A), A149, 1995
Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
L Marona, P Wisniewski, P Prystawko, I Grzegory, T Suski, S Porowski, ...
Applied physics letters 88 (20), 201111, 2006
Blue-violet laser diodes grown on bulk substrates by plasma-assisted molecular-beam epitaxy
C Skierbiszewski, ZR Wasilewski, M Siekacz, A Feduniewicz, P Perlin, ...
Applied Physics Letters 86 (1), 011114, 2005
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