| Size-dependent capacitance study on InGaN-based micro-light-emitting diodes W Yang, S Zhang, JJD McKendry, J Herrnsdorf, P Tian, Z Gong, Q Ji, ... Journal of Applied Physics 116 (4), 2014 | 56 | 2014 |
| Dislocation reduction and stress relaxation of GaN and InGaN multiple quantum wells with improved performance via serpentine channel patterned mask Q Ji, L Li, W Zhang, J Wang, P Liu, Y Xie, T Yan, W Yang, W Chen, X Hu ACS Applied Materials & Interfaces 8 (33), 21480-21489, 2016 | 26 | 2016 |
| Epitaxy of GaN in high aspect ratio nanoscale holes over silicon substrate K Wang, A Wang, Q Ji, X Hu, Y Xie, Y Sun, Z Cheng Applied Physics Letters 111 (25), 2017 | 4 | 2017 |
| Design of a tandem distributed Bragg reflectors specialized for enhancing the efficiency of GaN-based ultraviolet light-emitting diodes Y Yang, Q Ji, H Zong, T Yan, J Li, T Wei, X Hu Optics Communications 374, 80-83, 2016 | 4 | 2016 |
| The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections WY Cao, QB Ji, J He, W Yang, L Li, D Li, Q Wang, XD Hu, R Kamran, ... Chinese Physics Letters 32 (2), 027802, 2015 | 4 | 2015 |
| The photoluminescence properties of QWs with asymmetrical step-like InGaN/GaN quantum barriers K Rajabi, W Yang, D Li, J He, H Zong, Q Ji, B Shen, T Yan, X Hu Superlattices and Microstructures 80, 102-110, 2015 | 2 | 2015 |
| Pyramidal shape four V-grooved silicon substrate for enhancing cubic phase gallium nitride growth MSA Khan, J Li, Q Ji, M Lei, H Chen, R Lang, M Maqbool, X Hu Applied Physics Letters 120 (11), 2022 | 1 | 2022 |
| Theoretical investigation of loss-compensating hybrid waveguide using quasi-one-dimensional surface plasmon for green nanolaser W Yang, Q Ji, H Zong, K Rajabi, T Yan, X Hu Plasmonics 11, 159-165, 2016 | 1 | 2016 |
| The design criteria of hybrid waveguides using semiconductor gain to compensate the metal loss towards nano-scale lasers with high plasmonicity W Yang, H Zong, Q Ji, T Yan, X Hu Applied Physics Letters 105 (3), 2014 | 1 | 2014 |
| The epitaxy of GaN in deep and submicron holes over Si substrate A Wang, Q Ji, K Wang, X Hu, Y Xie, B Tang, Y Sun, Z Cheng 2016 13th IEEE International Conference on Solid-State and Integrated …, 2016 | | 2016 |
| Innovative III-Nitride Epitaxy Approach for Low Dislocation GaN and Free-Standing GaN Substrate XD Hu, JJ Wu, D Li, L Li, Q Ji, H Zong, T Han, Y Xie Electrochemical Society Meeting Abstracts 226, 2151-2151, 2014 | | 2014 |
