D.L. Huffaker, Diana Huffaker, Diana L. Huffaker

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BAOLAI LIANGUCLAE-mail confirmado em cnsi.ucla.edu
Ganesh BalakrishnanProfessor, ECE UNM, Director NM EPSCoRE-mail confirmado em unm.edu
L. Ralph DawsonResearch Professor of ECE, University of New MexicoE-mail confirmado em chtm.unm.edu
Jun TatebayashiOsaka UniversityE-mail confirmado em mat.eng.osaka-u.ac.jp
Dr. R. B. LaghumavarapuStaff Research Associate-III, University of California Los AngelesE-mail confirmado em ucla.edu
Andrew LinPh.D. Student of Electrical Engineering, University of California, Los AngelesE-mail confirmado em ucla.edu
Joshua N. ShapiroUniversity of California at Los Angeles, Electrical Engineering Dept.E-mail confirmado em ee.ucla.edu
Noppadon NuntawongNational Electronics and Computer Technology CenterE-mail confirmado em nectec.or.th
Adam ScofieldRockley PhotonicsE-mail confirmado em rockleyphotonics.com
Alan C FarrellUCLAE-mail confirmado em ngc.com
Pradeep SenanayakeUniversity of California Los AngelesE-mail confirmado em ucla.edu
Giacomo MarianiNASA Jet Propulsion LaboratoryE-mail confirmado em jpl.nasa.gov
Hyunseok KimUniversity of Illinois Urbana-ChampaignE-mail confirmado em illinois.edu
Wook-Jae LeeKongju National UniversityE-mail confirmado em kongju.ac.kr
Luke F. LesterRoanoke Electric Steel Professor and Head, Bradley Dept of ECE, Virginia TechE-mail confirmado em vt.edu
Maya Narayanan KuttyPostdoctoral Research Fellow, Centre for High Technology Materials, University of New MexicoE-mail confirmado em unm.edu
Guillaume HuyetUniversité Côte d'Azur, CNRS, Institut de Physique de NiceE-mail confirmado em inphyni.cnrs.fr
Gregory SalamoProfessor of Physics, University of ArkansasE-mail confirmado em uark.edu
Kalyan NunnaDrE-mail confirmado em iqep.com
Paul J SimmondsTufts UniversityE-mail confirmado em tufts.edu

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D.L. Huffaker, Diana Huffaker, Diana L. Huffaker

Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLA

E-mail confirmado em uta.edu - Página inicial

semiconductor physics semiconductor devices epitaxy nanotechnology


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
1.3 μm room-temperature GaAs-based quantum-dot laser DL Huffaker, G Park, Z Zou, OB Shchekin, DG Deppe Applied Physics Letters 73 (18), 2564-2566, 1998	1080	1998
Native‐oxide defined ring contact for low threshold vertical‐cavity lasers DL Huffaker, DG Deppe, K Kumar, TJ Rogers Applied Physics Letters 65 (1), 97-99, 1994	852	1994
Low-threshold oxide-confined 1.3-μm quantum-dot laser G Park, OB Shchekin, DL Huffaker, DG Deppe IEEE Photonics Technology Letters 12 (3), 230-232, 2000	426	2000
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ... Applied physics letters 88 (13), 2006	307	2006
GaAs nanopillar-array solar cells employing in situ surface passivation G Mariani, AC Scofield, CH Hung, DL Huffaker Nature communications 4 (1), 1497, 2013	288	2013
GaSb∕ GaAs type II quantum dot solar cells for enhanced infrared spectral response RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ... Applied Physics Letters 90 (17), 2007	251	2007
Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser G Park, OB Shchekin, S Csutak, DL Huffaker, DG Deppe Applied physics letters 75 (21), 3267-3269, 1999	235	1999
Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots DL Huffaker, DG Deppe Applied physics letters 73 (4), 520-522, 1998	232	1998
Improved device performance of InAs∕ GaAs quantum dot solar cells with GaP strain compensation layers RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ... Applied Physics Letters 91 (24), 2007	215	2007
Patterned radial GaAs nanopillar solar cells G Mariani, PS Wong, AM Katzenmeyer, F Léonard, J Shapiro, DL Huffaker Nano letters 11 (6), 2490-2494, 2011	183	2011
Spontaneous emission from planar microstructures DG Deppe, C Lei, CC Lin, DL Huffaker Journal of Modern Optics 41 (2), 325-344, 1994	171	1994
Low threshold half-wave vertical-cavity lasers DL Huffaker, J Shin, DG Deppe Electronics Letters 30 (23), 1946-1947, 1994	168	1994
Discrete energy level separation and the threshold temperature dependence of quantum dot lasers OB Shchekin, G Park, DL Huffaker, DG Deppe Applied Physics Letters 77 (4), 466-468, 2000	167	2000
Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors DL Huffaker, LA Graham, H Deng, DG Deppe IEEE Photonics Technology Letters 8 (8), 974-976, 1996	154	1996
Bottom-up photonic crystal lasers AC Scofield, SH Kim, JN Shapiro, A Lin, B Liang, A Scherer, DL Huffaker Nano letters 11 (12), 5387-5390, 2011	153	2011
Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers G Park, DL Huffaker, Z Zou, OB Shchekin, DG Deppe IEEE Photonics Technology Letters 11 (3), 301-303, 1999	153	1999
IEEE photon H Park, OB Shchekin, DL Huffaker, DG Deppe Technol. Lett 19 (4), 2007	132	2007
Interfacial misfit array formation for GaSb growth on GaAs S Huang, G Balakrishnan, DL Huffaker Journal of Applied Physics 105 (10), 2009	130	2009
Surface plasmon-enhanced nanopillar photodetectors P Senanayake, CH Hung, J Shapiro, A Lin, B Liang, BS Williams, ... Nano letters 11 (12), 5279-5283, 2011	129	2011
Topological insulator laser using valley-Hall photonic crystals Y Gong, S Wong, AJ Bennett, DL Huffaker, SS Oh Acs Photonics 7 (8), 2089-2097, 2020	127	2020

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