D.L. Huffaker, Diana Huffaker, Diana L. Huffaker
D.L. Huffaker, Diana Huffaker, Diana L. Huffaker
Professor of Electrical Engineering, UCLA and Cardiff University
E-mail confirmado em ee.ucla.edu - Página inicial
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1.3 μm room-temperature GaAs-based quantum-dot laser
DL Huffaker, G Park, Z Zou, OB Shchekin, DG Deppe
Applied Physics Letters 73 (18), 2564-2566, 1998
9801998
Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
DL Huffaker, DG Deppe, K Kumar, TJ Rogers
Applied Physics Letters 65 (1), 97-99, 1994
7341994
Low-threshold oxide-confined 1.3-μm quantum-dot laser
G Park, OB Shchekin, DL Huffaker, DG Deppe
IEEE Photonics Technology Letters 12 (3), 230-232, 2000
4042000
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ...
Applied physics letters 88 (13), 131911, 2006
2602006
GaAs nanopillar-array solar cells employing in situ surface passivation
G Mariani, AC Scofield, CH Hung, DL Huffaker
Nature communications 4 (1), 1-8, 2013
2342013
type II quantum dot solar cells for enhanced infrared spectral response
RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ...
Applied Physics Letters 90 (17), 173125, 2007
2222007
Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
DL Huffaker, DG Deppe
Applied physics letters 73 (4), 520-522, 1998
2151998
Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
G Park, OB Shchekin, S Csutak, DL Huffaker, DG Deppe
Applied physics letters 75 (21), 3267-3269, 1999
2131999
Improved device performance of quantum dot solar cells with GaP strain compensation layers
RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ...
Applied Physics Letters 91 (24), 243115, 2007
1992007
Low threshold half-wave vertical-cavity lasers
DL Huffaker, J Shin, DG Deppe
Electronics Letters 30 (23), 1946-1947, 1994
1601994
Patterned radial GaAs nanopillar solar cells
G Mariani, PS Wong, AM Katzenmeyer, F Léonard, J Shapiro, DL Huffaker
Nano letters 11 (6), 2490-2494, 2011
1582011
Discrete energy level separation and the threshold temperature dependence of quantum dot lasers
OB Shchekin, G Park, DL Huffaker, DG Deppe
Applied Physics Letters 77 (4), 466-468, 2000
1582000
Poisson’s ratio measurement in tungsten thin films combining an x-ray diffractometer with in situ tensile tester
PO Renault, KF Badawi, L Bimbault, P Goudeau, E Elkaım, JP Lauriat
Applied physics letters 73 (14), 1952-1954, 1998
149*1998
Spontaneous emission from planar microstructures
DG Deppe, C Lei, CC Lin, DL Huffaker
Journal of Modern Optics 41 (2), 325-344, 1994
1491994
Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
G Park, DL Huffaker, Z Zou, OB Shchekin, DG Deppe
IEEE Photonics Technology Letters 11 (3), 301-303, 1999
1421999
Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors
DL Huffaker, LA Graham, H Deng, DG Deppe
IEEE Photonics Technology Letters 8 (8), 974-976, 1996
1291996
Bottom-up photonic crystal lasers
AC Scofield, SH Kim, JN Shapiro, A Lin, B Liang, A Scherer, DL Huffaker
Nano letters 11 (12), 5387-5390, 2011
1152011
Spontaneous lifetime control in a native-oxide-apertured microcavity
LA Graham, DL Huffaker, DG Deppe
Applied physics letters 74 (17), 2408-2410, 1999
1141999
Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture
DL Huffaker, O Baklenov, LA Graham, BG Streetman, DG Deppe
Applied physics letters 70 (18), 2356-2358, 1997
1131997
Interfacial misfit array formation for GaSb growth on GaAs
S Huang, G Balakrishnan, DL Huffaker
Journal of Applied Physics 105 (10), 103104, 2009
1052009
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