| InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz AM Arabhavi, F Ciabattini, S Hamzeloui, R Flückiger, T Saranovac, D Han, ... IEEE Transactions on Electron Devices 69 (4), 2122-2129, 2022 | 28 | 2022 |
| Low-noise microwave performance of 30 nm GaInAs MOS-HEMTs: Comparison to low-noise HEMTs D Han, DC Ruiz, G Bonomo, T Saranovac, OJS Ostinelli, CR Bolognesi IEEE Electron Device Letters 41 (9), 1320-1323, 2020 | 7 | 2020 |
| Contribution of remote interface polar phonons in the hole mobility of diamond G Bonomo, A Mohamed, S Farid, K Park, M Dutta, MA Stroscio Diamond and Related Materials 101, 107650, 2020 | 7 | 2020 |
| High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part II: Dynamic Switching and RF Performance D Han, G Bonomo, DC Ruiz, AM Arabhavi, OJS Ostinelli, CR Bolognesi IEEE Transactions on Electron Devices 69 (7), 3549-3556, 2022 | 3 | 2022 |
| InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with fMAX = 1.2 THz AM Arabhavi, F Ciabattini, S Hamzeloui, R Flückiger, T Popovic, D Han, ... 2021 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2021 | 3 | 2021 |
| High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS= 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation D Han, G Bonomo, DC Ruiz, AM Arabhavi, OJS Ostinelli, CR Bolognesi IEEE Transactions on Electron Devices 69 (7), 3542-3548, 2022 | 2 | 2022 |
| Surface-acoustics phonon scattering in 2D-hole gas of diamond based FET devices R Singh, G Bonomo, S Farid, MR Neupane, AG Birdwell, TG Ivanov, ... Carbon 169, 488-500, 2020 | 2 | 2020 |
| Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance D Calvo Ruiz, D Han, G Bonomo, T Saranovac, O Ostinelli, CR Bolognesi physica status solidi (a) 218 (3), 2000191, 2021 | | 2021 |
| Impact of Reduced Gate‐to‐Source Spacing on InP HEMT Performance D Calvo Ruiz, D Han, G Bonomo, T Saranovac, O Ostinelli, CR Bolognesi Physica Status Solidi A, 2020 | | 2020 |
| Contribution of Interface Acoustic Phonons and Remote-polar Phonons in the Hole Mobility of Diamond G Bonomo University of Illinois at Chicago, 2019 | | 2019 |
Prof. Dr. Colombo BolognesiETH Zurich, Chair, Millimeter-Wave ElectronicsE-mail confirmado em mwe.ee.ethz.ch
