Metal–oxide–semiconductor devices using dielectrics on -type GaN CT Lee, HW Chen, HY Lee
Applied physics letters 82 (24), 4304-4306, 2003
193 2003 Versatile Insensitive Current-Mode Universal Biquad Implementation Using Current Conveyors HYWCT Lee
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal …, 2001
179 2001 Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n -type GaN CT Lee, HW Kao
Applied Physics Letters 76 (17), 2364-2366, 2000
177 2000 ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique RW Chuang, RX Wu, LW Lai, CT Lee
Applied Physics Letters 91 (23), 2007
164 2007 Ultraviolet photodetectors with ZnO nanowires prepared on ZnO: Ga/glass templates CY Lu, SJ Chang, SP Chang, CT Lee, CF Kuo, HM Chang, YZ Chiou, ...
Applied Physics Letters 89 (15), 2006
139 2006 A bilayer Ti/Ag ohmic contact for highly doped n ‐type GaN films JD Guo, CI Lin, MS Feng, FM Pan, GC Chi, CT Lee
Applied physics letters 68 (2), 235-237, 1996
134 1996 Investigation of optical and electrical properties of ZnO thin films LW Lai, CT Lee
Materials Chemistry and Physics 110 (2-3), 393-396, 2008
124 2008 Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode QX Yu, B Xu, QH Wu, Y Liao, GZ Wang, RC Fang, HY Lee, CT Lee
Applied physics letters 83 (23), 4713-4715, 2003
124 2003 Fabrication methods and luminescent properties of ZnO materials for light-emitting diodes CT Lee
Materials 3 (4), 2218-2259, 2010
121 2010 High-performance room temperature NH3 gas sensors based on polyaniline-reduced graphene oxide nanocomposite sensitive membrane CT Lee, YS Wang
Journal of Alloys and Compounds 789, 693-696, 2019
116 2019 Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers SJ Chang, LW Wu, YK Su, YP Hsu, WC Lai, JM Tsai, JK Sheu, CT Lee
IEEE Photonics Technology Letters 16 (6), 1447-1449, 2004
102 2004 Monolithic red/green/blue micro-LEDs with HBR and DBR structures GS Chen, BY Wei, CT Lee, HY Lee
IEEE Photonics Technology Letters 30 (3), 262-265, 2017
99 2017 Nitride-based flip-chip ITO LEDs SJ Chang, CS Chang, YK Su, CT Lee, WS Chen, CF Shen, YP Hsu, ...
IEEE Transactions on Advanced Packaging 28 (2), 273-277, 2005
98 2005 Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs YP Hsu, SJ Chang, YK Su, JK Sheu, CT Lee, TC Wen, LW Wu, CH Kuo, ...
Journal of Crystal Growth 261 (4), 466-470, 2004
90 2004 Improved detection sensitivity of Pt/β-Ga2O3/GaN hydrogen sensor diode JT Yan, CT Lee
Sensors and Actuators B: Chemical 143 (1), 192-197, 2009
81 2009 Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to GaN YJ Lin, CT Lee
Applied Physics Letters 77 (24), 3986-3988, 2000
81 2000 White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes CT Lee, UZ Yang, CS Lee, PS Chen
IEEE photonics technology letters 18 (19), 2029-2031, 2006
78 2006 Nanostructured EGFET pH sensors with surface-passivated ZnO thin-film and nanorod array YS Chiu, CY Tseng, CT Lee
IEEE Sensors Journal 12 (5), 930-934, 2011
75 2011 Sensing mechanisms of Pt/β-Ga2O3/GaN hydrogen sensor diodes CT Lee, JT Yan
Sensors and Actuators B: Chemical 147 (2), 723-729, 2010
73 2010 Schottky barrier height and surface state density of Ni/Au contacts to -treated n -type GaN CT Lee, YJ Lin, DS Liu
Applied Physics Letters 79 (16), 2573-2575, 2001
73 2001