Photoluminescence of tetrahedrally coordinated a - :H LR Tessler, I Solomon
Physical review B 52 (15), 10962, 1995
107 1995 Erbium luminescence from hydrogenated amorphous silicon-erbium prepared by cosputtering AR Zanatta, LAO Nunes, LR Tessler
Applied physics letters 70 (4), 511-513, 1997
82 1997 Environment of Erbium in and C Piamonteze, AC Iniguez, LR Tessler, MCM Alves, H Tolentino
Physical review letters 81 (21), 4652, 1998
68 1998 Time resolved photoluminescence of porous silicon: Evidence for tunneling limited recombination in a band of localized states LR Tessler, F Alvarez, O Teschke
Applied physics letters 62 (19), 2381-2383, 1993
61 1993 Ação afirmativa sem cotas: o programa de ação afirmativa e inclusão social da Unicamp LR Tessler
Simpósio Universidade e Inclusão Social: Experiência e Imaginação, 22-24, 2006
49 2006 Pressure-induced physical changes of noble gases implanted in highly stressed amorphous carbon films RG Lacerda, MC Dos Santos, LR Tessler, P Hammer, F Alvarez, ...
Physical Review B 68 (5), 054104, 2003
44 2003 Nanosize structures connectivity in porous silicon and its relation to photoluminescence efficiency O Teschke, F Alvarez, L Tessler, MU Kleinke
Applied physics letters 63 (14), 1927-1929, 1993
39 1993 Optoelectronic properties of highly conductive microcrystalline SiC produced by laser crystallisation of amorphous SiC SP Lau, JM Marshall, LR Tessler
Journal of non-crystalline solids 198, 907-910, 1996
37 1996 Synthesis of silicon nanocrystals with erbium-rich surface layers RA Senter, Y Chen, JL Coffer, LR Tessler
Nano Letters 1 (7), 383-386, 2001
36 2001 Preparation and patterning of YBaCuO thin films obtained by sequential deposition of CuOx /Y2 O3 /BaF2 N Hess, LR Tessler, U Dai, G Deutscher
Applied physics letters 53 (8), 698-699, 1988
33 1988 Erbium environment in silicon nanoparticles LR Tessler, JL Coffer, J Ji, RA Senter
Journal of non-crystalline solids 299, 673-677, 2002
22 2002 Erbium in a-Si: H LR Tessler
Brazilian Journal of Physics 29, 616-622, 1999
20 1999 Evolution of the Er environment in a-Si: H under annealing: ion implantation versus co-deposition LR Tessler, C Piamonteze, MCM Alves, H Tolentino
Journal of non-crystalline solids 266, 598-602, 2000
19 2000 Optimization of the as-deposited 1.54 μm photoluminescence intensity in a-SiOx: H LR Tessler, AC Iñiguez
Journal of non-crystalline solids 266, 603-607, 2000
19 2000 Rare earth doped silicon nanocrystals derived from an erbium amidinate precursor J Ji, RA Senter, LR Tessler, D Back, CH Winter, JL Coffer
Nanotechnology 15 (5), 643, 2004
18 2004 Influence of deposition conditions on the characteristics of luminescent silicon carbonitride thin films Z Khatami, GBF Bosco, J Wojcik, LR Tessler, P Mascher
ECS Journal of Solid State Science and Technology 7 (2), N7, 2018
16 2018 Near infra-red photoluminescence of Nd3+ in hydrogenated amorphous silicon sub-nitrides a-SiNx: H D Biggemann, LR Tessler
Materials Science and Engineering: B 105 (1-3), 188-191, 2003
14 2003 Structural characterization of ZnO/Er2O3 core/shell nanowires D Mustafa, D Biggemann, J Wu, JL Coffer, LR Tessler
Superlattices and Microstructures 42 (1-6), 403-408, 2007
13 2007 Highly polarized photoluminescence from 2‐μm‐thick strained GaAs grown on CaF2 LR Tessler, C Hermann, G Lampel, Y Lassailly, C Fontaine, E Daran, ...
Applied physics letters 64 (7), 895-897, 1994
13 1994 Erbium enhanced formation and growth of photoluminescent Er/Si nanocrystals D Mustafa, D Biggemann, JA Martens, CEA Kirschhock, LR Tessler, ...
Thin Solid Films 536, 196-201, 2013
12 2013