Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007
226 2007 Single event transient pulse widths in digital microcircuits MJ Gadlage, RD Schrimpf, JM Benedetto, PH Eaton, DG Mavis, M Sibley, ...
IEEE transactions on nuclear science 51 (6), 3285-3290, 2004
220 2004 Single-event transient pulse quenching in advanced CMOS logic circuits JR Ahlbin, LW Massengill, BL Bhuva, B Narasimham, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 56 (6), 3050-3056, 2009
199 2009 Heavy ion-induced digital single-event transients in deep submicron processes J Benedetto, P Eaton, K Avery, D Mavis, M Gadlage, T Turflinger, ...
IEEE Transactions on Nuclear Science 51 (6), 3480-3485, 2004
196 2004 Digital single event transient trends with technology node scaling JM Benedetto, PH Eaton, DG Mavis, M Gadlage, T Turflinger
IEEE Transactions on Nuclear Science 53 (6), 3462-3465, 2006
189 2006 Single event transient pulsewidth measurements using a variable temporal latch technique P Eaton, J Benedetto, D Mavis, K Avery, M Sibley, M Gadlage, T Turflinger
IEEE transactions on nuclear science 51 (6), 3365-3368, 2004
180 2004 The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process JR Ahlbin, MJ Gadlage, DR Ball, AW Witulski, BL Bhuva, RA Reed, ...
IEEE Transactions on Nuclear Science 57 (6), 3380-3385, 2010
118 2010 Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes MJ Gadlage, JR Ahlbin, B Narasimham, BL Bhuva, LW Massengill, ...
IEEE Transactions on Nuclear Science 57 (6), 3336-3341, 2010
118 2010 Variation of digital SET pulse widths and the implications for single event hardening of advanced CMOS processes JM Benedetto, PH Eaton, DG Mavis, M Gadlage, T Turflinger
IEEE Transactions on Nuclear Science 52 (6), 2114-2119, 2005
96 2005 Effects of guard bands and well contacts in mitigating long SETs in advanced CMOS processes B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 55 (3), 1708-1713, 2008
78 2008 Soft errors induced by high-energy electrons MJ Gadlage, AH Roach, AR Duncan, AM Williams, DP Bossev, MJ Kay
IEEE Transactions on Device and Materials Reliability 17 (1), 157-162, 2016
77 2016 Independent measurement of SET pulse widths from N-hits and P-hits in 65-nm CMOS S Jagannathan, MJ Gadlage, BL Bhuva, RD Schrimpf, B Narasimham, ...
IEEE Transactions on Nuclear Science 57 (6), 3386-3391, 2010
68 2010 Effect of multiple-transistor charge collection on single-event transient pulse widths JR Ahlbin, MJ Gadlage, NM Atkinson, B Narasimham, BL Bhuva, ...
IEEE Transactions on Device and Materials Reliability 11 (3), 401-406, 2011
64 2011 Single-event transient measurements in nMOS and pMOS transistors in a 65-nm bulk CMOS technology at elevated temperatures MJ Gadlage, JR Ahlbin, B Narasimham, BL Bhuva, LW Massengill, ...
IEEE Transactions on Device and Materials Reliability 11 (1), 179-186, 2010
52 2010 Electron-induced single-event upsets in 45-nm and 28-nm bulk CMOS SRAM-based FPGAs operating at nominal voltage MJ Gadlage, AH Roach, AR Duncan, MW Savage, MJ Kay
IEEE Transactions on Nuclear Science 62 (6), 2717-2724, 2015
51 2015 Temperature dependence of digital single-event transients in bulk and fully-depleted SOI technologies MJ Gadlage, JR Ahlbin, V Ramachandran, P Gouker, CA Dinkins, ...
IEEE Transactions on Nuclear Science 56 (6), 3115-3121, 2009
51 2009 Laser verification of charge sharing in a 90 nm bulk CMOS process OA Amusan, MC Casey, BL Bhuva, D McMorrow, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 56 (6), 3065-3070, 2009
50 2009 Digital device error rate trends in advanced CMOS technologies MJ Gadlage, PH Eaton, JM Benedetto, M Carts, V Zhu, TL Turflinger
IEEE Transactions on Nuclear Science 53 (6), 3466-3471, 2006
43 2006 Generation and Propagation of Single Event Transients in 0.18- Fully Depleted SOI P Gouker, J Brandt, P Wyatt, B Tyrrell, A Soares, J Knecht, C Keast, ...
IEEE Transactions on Nuclear Science 55 (6), 2854-2860, 2008
41 2008 Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits MJ Gadlage, RD Schrimpf, B Narasimham, BL Bhuva, PH Eaton, ...
IEEE Transactions on Nuclear Science 54 (6), 2495-2499, 2007
40 2007