Formation of high-quality quasi-free-standing bilayer graphene on SiC (0 0 0 1) by oxygen intercalation upon annealing in air MH Oliveira Jr, T Schumann, F Fromm, R Koch, M Ostler, M Ramsteiner, ...
Carbon 52, 83-89, 2013
134 2013 Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC (0001) F Fromm, MH Oliveira Jr, A Molina-Sánchez, M Hundhausen, JMJ Lopes, ...
New Journal of Physics 15 (4), 043031, 2013
132 2013 Amorphous lanthanum lutetium oxide thin films as an alternative high- JMJ Lopes, M Roeckerath, T Heeg, E Rije, J Schubert, S Mantl, ...
Applied physics letters 89 (22), 222902, 2006
106 2006 Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy S Nakhaie, JM Wofford, T Schumann, U Jahn, M Ramsteiner, M Hanke, ...
Applied Physics Letters 106 (21), 213108, 2015
91 2015 Influence of the silicon carbide surface morphology on the epitaxial graphene formation MH Oliveira Jr, T Schumann, M Ramsteiner, JMJ Lopes, H Riechert
Applied Physics Letters 99 (11), 111901, 2011
69 2011 Amorphous ternary rare-earth gate oxides for future integration in MOSFETs JMJ Lopes, ED Özben, M Roeckerath, U Littmark, R Luptak, M Luysberg, ...
Microelectronic engineering 86 (7-9), 1646-1649, 2009
68 2009 Mono-and few-layer nanocrystalline graphene grown on Al2O3 (0 0 0 1) by molecular beam epitaxy MH Oliveira Jr, T Schumann, R Gargallo-Caballero, F Fromm, T Seyller, ...
Carbon 56, 339-350, 2013
64 2013 Molecular beam epitaxy of GaN nanowires on epitaxial graphene S Fernández-Garrido, M Ramsteiner, G Gao, LA Galves, B Sharma, ...
Nano letters 17 (9), 5213-5221, 2017
61 2017 Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces T Schumann, KJ Friedland, MH Oliveira Jr, A Tahraoui, JMJ Lopes, ...
Physical Review B 85 (23), 235402, 2012
53 2012 A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures JM Wofford, S Nakhaie, T Krause, X Liu, M Ramsteiner, M Hanke, ...
Scientific reports 7 (1), 1-10, 2017
51 2017 Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces MH Oliveira Jr, JMJ Lopes, T Schumann, LA Galves, M Ramsteiner, ...
Nature communications 6 (1), 1-7, 2015
49 2015 Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3 VV Afanas’ev, S Shamuilia, M Badylevich, A Stesmans, LF Edge, W Tian, ...
Microelectronic engineering 84 (9-10), 2278-2281, 2007
49 2007 Cluster coarsening and luminescence emission intensity of Ge nanoclusters in JMJ Lopes, FC Zawislak, M Behar, PFP Fichtner, L Rebohle, W Skorupa
Journal of applied physics 94 (9), 6059-6064, 2003
47 2003 Acousto-electric transport in epitaxial monolayer graphene on SiC PV Santos, T Schumann, MH Oliveira Jr, JMJ Lopes, H Riechert
Applied physics letters 102 (22), 221907, 2013
46 2013 Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC (0001) T Schumann, M Dubslaff, MH Oliveira Jr, M Hanke, JMJ Lopes, H Riechert
Physical Review B 90 (4), 041403, 2014
45 2014 La-based ternary rare-earth oxides as alternative high-κ dielectrics JMJ Lopes, M Roeckerath, T Heeg, U Littmark, J Schubert, S Mantl, Y Jia, ...
Microelectronic engineering 84 (9-10), 1890-1893, 2007
43 2007 Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric M Roeckerath, T Heeg, JMJ Lopes, J Schubert, S Mantl, A Besmehn, ...
Thin solid films 517 (1), 201-203, 2008
38 2008 Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high- JMJ Lopes, U Littmark, M Roeckerath, S Lenk, J Schubert, S Mantl, ...
Journal of applied physics 101 (10), 104109, 2007
38 2007 Integration of ED Özben, JMJ Lopes, A Nichau, M Schnee, S Lenk, A Besmehn, ...
IEEE electron device letters 32 (1), 15-17, 2010
37 2010 Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size P Myllymäki, M Roeckerath, JM Lopes, J Schubert, K Mizohata, ...
Journal of materials chemistry 20 (20), 4207-4212, 2010
37 2010 