Jorge Kittl
Jorge Kittl
Vice President Samsung, Prof. KU Leuven
E-mail confirmado em samsung.com
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10×10nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
6992011
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
2342009
Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
1592012
Complete experimental test of kinetic models for rapid alloy solidification
JA Kittl, PG Sanders, MJ Aziz, DP Brunco, MO Thompson
Acta materialia 48 (20), 4797-4811, 2000
1442000
Ni-and Co-based silicides for advanced CMOS applications
JA Kittl, A Lauwers, O Chamirian, M Van Dal, A Akheyar, M De Potter, ...
Microelectronic Engineering 70 (2-4), 158-165, 2003
1352003
Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines
JA Kittl, DA Prinslow, PP Apte, MF Pas
Applied physics letters 67 (16), 2308-2310, 1995
1301995
Dynamic ‘hour glass’ model for SET and RESET in HfO2RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
1042012
Semiconductor-metal transition in thin films grown by ozone based atomic layer deposition
G Rampelberg, M Schaekers, K Martens, Q Xie, D Deduytsche, ...
Applied Physics Letters 98 (16), 162902, 2011
1002011
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
L Goux, K Opsomer, R Degraeve, R Müller, C Detavernier, DJ Wouters, ...
Applied Physics Letters 99 (5), 053502, 2011
932011
High current effects in silicide films for sub-0.25/spl mu/m VLSI technologies
K Banerjee, C Hu, A Amerasekera, JA Kittl
1998 IEEE International Reliability Physics Symposium Proceedings. 36th …, 1998
911998
Ni based silicides for 45 nm CMOS and beyond
A Lauwers, JA Kittl, MJH Van Dal, O Chamirian, MA Pawlak, M de Potter, ...
Materials Science and Engineering: B 114, 29-41, 2004
852004
Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies
JA Kittl, QZ Hong
Thin Solid Films 320 (1), 110-121, 1998
831998
Work function of Ni silicide phases on HfSiON and SiO/sub 2: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
JA Kittl, MA Pawlak, A Lauwers, C Demeurisse, K Opsomer, KG Anil, ...
IEEE electron device letters 27 (1), 34-36, 2005
802005
Nonequilibrium partitioning during rapid solidification of Si As alloys
JA Kittl, MJ Aziz, DP Brunco, MO Thompson
Journal of crystal growth 148 (1-2), 172-182, 1995
761995
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
742012
Atomic layer deposition of strontium titanate films using Sr (# 2# 1Cp) 2 and Ti (OMe) 4
M Popovici, S Van Elshocht, N Menou, J Swerts, D Pierreux, A Delabie, ...
Journal of the Electrochemical Society 157 (1), G1, 2009
732009
Nucleation and growth of YBaCuO on SrTiO3
BM Clemens, CW Nieh, JA Kittl, WL Johnson, JY Josefowicz, AT Hunter
Applied physics letters 53 (19), 1871-1873, 1988
731988
Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments
R Degraeve, P Roussel, L Goux, D Wouters, J Kittl, L Altimime, M Jurczak, ...
2010 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2010
692010
Composition influence on the physical and electrical properties of -based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN …
N Menou, M Popovici, S Clima, K Opsomer, W Polspoel, B Kaczer, ...
Journal of Applied Physics 106 (9), 094101, 2009
652009
A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
S Yu, Y Yin Chen, X Guan, HS Philip Wong, JA Kittl
Applied Physics Letters 100 (4), 043507, 2012
642012
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