Timothy A Morgan
Timothy A Morgan
Scientist, Naval Surface Warfare Center Crane
E-mail confirmado em navy.mil
TítuloCitado porAno
Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n …
Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ...
AIP Advances 3 (7), 072112, 2013
572013
InGaAs quantum wire intermediate band solar cell
VP Kunets, CS Furrow, TA Morgan, Y Hirono, ME Ware, VG Dorogan, ...
Applied Physics Letters 101 (4), 041106, 2012
232012
Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy
C Li, ZQ Zeng, DS Fan, Y Hirono, J Wu, TA Morgan, X Hu, SQ Yu, ...
Applied Physics Letters 99 (24), 243113, 2011
192011
Scalable chitosan-graphene oxide membranes: the effect of GO size on properties and cross-flow filtration performance
M Abolhassani, CS Griggs, LA Gurtowski, JA Mattei-Sosa, M Nevins, ...
ACS omega 2 (12), 8751-8759, 2017
162017
Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy
VP Kunets, TA Morgan, YI Mazur, VG Dorogan, PM Lytvyn, ME Ware, ...
Journal of Applied Physics 104 (10), 103709, 2008
162008
AIP Adv. 3, 072112 (2013)
Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ...
8
Strained quantum well InAs micro-Hall sensors: Dependence of device performance on channel thickness
J Dobbert, VP Kunets, TA Morgan, D Guzun, YI Mazur, WT Masselink, ...
IEEE transactions on electron devices 55 (2), 695-700, 2008
62008
A tracking technology for security personnel and first responders
P Womble, A Barzilov, J Paschal, L Hopper, A Music, T Morgan, R Moore, ...
Sensors, and Command, Control, Communications, and Intelligence (C3I …, 2005
32005
Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
B Alharthi, W Dou, PC Grant, JM Grant, T Morgan, A Mosleh, W Du, B Li, ...
Applied Surface Science 481, 246-254, 2019
22019
Investigation of deep levels in InGaAs channels comprising thin layers of InAs
J Dobbert, VP Kunets, TA Morgan, D Guzun, YI Mazur, WT Masselink, ...
Journal of Materials Science: Materials in Electronics 19 (8-9), 797-800, 2008
22008
Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN (0001) quantum well structures
C Li, Y Maidaniuk, AV Kuchuk, S Shetty, P Ghosh, TP White, TA Morgan, ...
Journal of Applied Physics 123 (19), 195302, 2018
12018
Electronic noise spectroscopy of indium gallium arsenide quantum dots
TA Morgan
University of Arkansas, 2008
12008
Ellipsometric study of aluminum-nickel nano-films for plasmonic application
HH Abu-Safe, I Hammoudeh, H Al-Nasser, TA Morgan, ME Ware, ...
Nanostructured Thin Films XI 10731, 107310J, 2018
2018
Self-assembled stoichiometric barium titanate thin films grown by molecular beam epitaxy
TA Morgan, M Zamani-Alavijeh, S Erickson, G Story, W Schroeder, ...
Journal of Crystal Growth 493, 15-19, 2018
2018
Molecular beam epitaxial growth of Bi {sub 2} Te {sub 3} and Sb {sub 2} Te {sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological …
Z Zeng, TA Morgan, C Li, Y Hirono, X Hu, ME Hawkridge, M Benamara, ...
AIP Advances 3 (7), 2013
2013
Fabrication of Bi2Te3 Nanodots by Droplet Epitaxy on GaAs substrates
Z Zeng, C Li, D Fan, Y Hirono, T Morgan, X Hu, J Wang, M Singh, Z Wang, ...
APS Meeting Abstracts, 2012
2012
Electronic Noise Spectroscopy of In0. 35Ga0. 65As Quantum Dots
TA Morgan
University of Arkansas, Fayetteville, 2008
2008
Molecular beam epitaxy growth of BaTiO 3 Nanodots Grown via Tensile Strain on MgO (001) Substrates
TA Morgan, ZQ Zeng, RJ Sleezer, GJ Salamo
MBE Grown BaTiO 3 Nanodots Grown via Tensile Strain on MgO (001) Substrates
TA Morgan, Z Zeng, R Sleezer, GJ Salamo
Electronic Noise Spectroscopy of In 0.35 Ga 0.65 As Quantum Dots
TA Morgan
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Artigos 1–20