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Saurav Roy
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High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2
S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy
IEEE Electron Device Letters 42 (8), 1140-1143, 2021
1112021
Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window
A Bhattacharyya, P Ranga, S Roy, J Ogle, L Whittaker-Brooks, ...
Applied Physics Letters 117 (14), 2020
742020
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
A Bhattacharyya, P Ranga, S Roy, C Peterson, F Alema, G Seryogin, ...
IEEE Electron Device Letters 42 (9), 1272-1275, 2021
702021
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2
A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ...
Applied Physics Express 15 (6), 061001, 2022
562022
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1− x) 2O3/β-Ga2O3 heterostructure channels
P Ranga, A Bhattacharyya, A Chmielewski, S Roy, R Sun, MA Scarpulla, ...
Applied Physics Express 14 (2), 025501, 2021
522021
130 mA mm− 1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
A Bhattacharyya, S Roy, P Ranga, D Shoemaker, Y Song, JS Lundh, ...
Applied Physics Express 14 (7), 076502, 2021
502021
Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric
A Bhattacharyya, P Ranga, M Saleh, S Roy, MA Scarpulla, KG Lynn, ...
IEEE Journal of the Electron Devices Society 8, 286-294, 2020
492020
Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown
S Roy, A Bhattacharyya, S Krishnamoorthy
IEEE Transactions on Electron Devices 67 (11), 4842-4848, 2020
342020
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2
A Bhattacharyya, S Roy, P Ranga, C Peterson, S Krishnamoorthy
IEEE Electron Device Letters 43 (10), 1637-1640, 2022
322022
Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy
P Ranga, A Bhattacharyya, A Chmielewski, S Roy, N Alem, ...
Applied Physics Letters 117 (17), 2020
262020
In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
S Roy, AE Chmielewski, A Bhattacharyya, P Ranga, R Sun, MA Scarpulla, ...
Advanced Electronic Materials 7 (11), 2100333, 2021
252021
β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit
S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy
IEEE Electron Device Letters 43 (12), 2037-2040, 2022
202022
Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films
F Alema, C Peterson, A Bhattacharyya, S Roy, S Krishnamoorthy, ...
IEEE Electron Device Letters 43 (10), 1649-1652, 2022
182022
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
A Bhattacharyya, C Peterson, T Itoh, S Roy, J Cooke, S Rebollo, P Ranga, ...
APL Materials 11 (2), 2023
172023
2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate
S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy
Applied Physics Letters 122 (15), 2023
142023
2-D analytical modeling of surface potential and threshold voltage for vertical super-thin body FET
S Roy, A Chatterjee, DK Sinha, R Pirogova, S Baishya
IEEE Transactions on Electron Devices 64 (5), 2106-2112, 2017
122017
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
Y Song, A Bhattacharyya, A Karim, D Shoemaker, HL Huang, S Roy, ...
ACS Applied Materials & Interfaces 15 (5), 7137-7147, 2023
112023
Analytical modeling and design of gallium oxide schottky barrier diodes beyond unipolar figure of merit using high-k dielectric superjunction structures
S Roy, A Bhattacharyya, S Krishnamoorthy
arXiv preprint arXiv:2008.00280, 2020
82020
Comparative study of periphyton growth on two different substrates (palm leaf and nylon net)
MP Dutta, B Phukan, S Baishya, IA Hussain, D Kashyap, P Deka, S Roy
Environment and Ecology 31 (4), 1725-1731, 2013
72013
Delta-doped
P Ranga, A Bhattacharyya, A Chmielewski, S Roy, N Alem, ...
Appl. Phys. Exp 13 (4), 2020
62020
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