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762 2014 High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
301 2016 Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ...
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204 2017 Field-Effect Transistors With Graphene/Metal HeterocontactsY Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, DY Peide
IEEE electron device letters 35 (5), 599-601, 2014
172 2014 Surface chemistry of black phosphorus under a controlled oxidative environment W Luo, DY Zemlyanov, CA Milligan, Y Du, L Yang, Y Wu, DY Peide
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156 2016 Performance Potential and Limit of MoS2 Transistors X Li, L Yang, M Si, S Li, M Huang, P Ye, Y Wu
Advanced Materials 27 (9), 1547-1552, 2015
110 2015 High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm) L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
87 2014 Performance enhancement of black phosphorus field-effect transistors by chemical doping Y Du, L Yang, H Zhou, DY Peide
IEEE Electron Device Letters 37 (4), 429-432, 2016
70 2016 Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors Y Du, L Yang, H Liu, PD Ye
APL Materials 2 (9), 2014
63 2014 Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance M Si, C Jiang, CJ Su, YT Tang, L Yang, W Chung, MA Alam, PD Ye
2017 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2017
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2010 Symposium on VLSI Technology, 89-90, 2010
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ACS omega 2 (10), 7136-7140, 2017
48 2017 Reliable passivation of black phosphorus by thin hybrid coating S Gamage, A Fali, N Aghamiri, L Yang, PD Ye, Y Abate
Nanotechnology 28 (26), 265201, 2017
48 2017 Nanomanufacturing of 2D Transition Metal Dichalcogenide Materials Using Self-Assembled DNA Nanotubes. J Choi, H Chen, F Li, L Yang, SS Kim, RR Naik, PD Ye, JH Choi
chemical vapor deposition 13, 15, 2015
41 2015 10 nm nominal channel length MoS2 FETs with EOT 2.5 nm and 0.52 mA/µm drain current L Yang, RTP Lee, SSP Rao, W Tsai, PD Ye
2015 73rd Annual Device Research Conference (DRC), 237-238, 2015
36 2015 Low Reset Current in Stacked Resistive Switching Memory YL Song, Y Liu, YL Wang, M Wang, XP Tian, LM Yang, YY Lin
IEEE electron device letters 32 (10), 1439-1441, 2011
35 2011 Linear Scaling of Reset Current Down to 22-nm Node for a Novel RRAM LM Yang, YL Song, Y Liu, YL Wang, XP Tian, M Wang, YY Lin, R Huang, ...
IEEE electron device letters 33 (1), 89-91, 2011
34 2011 Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors X Li, Y Du, M Si, L Yang, S Li, T Li, X Xiong, P Ye, Y Wu
Nanoscale 8 (6), 3572-3578, 2016
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ACS omega 2 (8), 4173-4179, 2017
23 2017