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Manvi Agrawal
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GaN schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
IEEE Sensors Journal 17 (1), 72-77, 2016
292016
Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si (111) using ammonia-molecular beam epitaxy
L Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, L Yiding, ...
Journal of Applied Physics 117 (2), 025301, 2015
222015
Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si (111) by ammonia molecular beam epitaxy
N Dharmarasu, K Radhakrishnan, M Agrawal, L Ravikiran, S Arulkumaran, ...
Applied Physics Express 5 (9), 091003, 2012
222012
Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran
Thin Solid Films 520 (24), 7109-7114, 2012
152012
AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors
A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu
Japanese Journal of Applied Physics 58 (SC), SCCD23, 2019
112019
Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si (111)
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
Semiconductor Science and Technology 31 (9), 095003, 2016
112016
Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si (111) by plasma assisted molecular beam epitaxy
M Agrawal, K Radhakrishnan, N Dharmarasu, SS Pramana
Japanese Journal of Applied Physics 54 (6), 065701, 2015
112015
Mid-Infrared GaN/AlGaN quantum cascade detector grown on silicon
B Dror, Y Zheng, M Agrawal, K Radhakrishnan, M Orenstein, G Bahir
IEEE Electron Device Letters 40 (2), 263-266, 2018
92018
Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si (111)
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, ...
Journal of Applied Physics 114 (12), 123503, 2013
92013
Realization of two‐dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA‐MBE
N Dharmarasu, K Radhakrishnan, ZZ Sun, M Agrawal
physica status solidi c 8 (7‐8), 2075-2077, 2011
92011
Effect of stress mitigating layers on the structural properties of GaN grown by ammonia molecular beam epitaxy on 100 mm Si (111)
L Ravikiran, M Agrawal, N Dharmarasu, K Radhakrishnan
Japanese Journal of Applied Physics 52 (8S), 08JE05, 2013
72013
A study on GaSi interdiffusion during (Al) GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
Y Zheng, M Agrawal, N Dharmarasu, K Radhakrishnan, S Patwal
Applied Surface Science 481, 319-326, 2019
62019
Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy
M Agrawal, L Ravikiran, N Dharmarasu, K Radhakrishnan, ...
AIP Advances 7 (1), 015022, 2017
62017
Non-linear thermal resistance model for the simulation of high power GaN-based devices
S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, K Ranjan, M Agrawal, ...
Semiconductor Science and Technology 36 (5), 055002, 2021
52021
In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron …
R Lingaparthi, N Dharmarasu, K Radhakrishnan, M Agrawal
Thin Solid Films 708, 138128, 2020
52020
Pt/AlGaN/GaN HEMT based ammonia gas sensors
A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu
2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5, 2019
52019
Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si (111)
L Ravikiran, K Radhakrishnan, S Munawar Basha, N Dharmarasu, ...
Journal of Applied Physics 117 (24), 245305, 2015
52015
AlGaN/GaN HEMT grown on SiC with carbon doped GaN buffer by MOCVD
N Dharmarasu, GS Karthikeyan, M Agrawal, STL Alex, K Radhakrishnan
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 434-436, 2019
42019
Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (1 1 1) by ammonia molecular beam epitaxy
M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran
Journal of crystal growth 378, 283-286, 2013
42013
Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering
S Patwal, M Agrawal, K Radhakrishnan, TLA Seah, N Dharmarasu
physica status solidi (a) 217 (7), 1900818, 2020
32020
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