| GaN Schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ... IEEE Sensors Journal 17 (1), 72-77, 2016 | 39 | 2016 |
| Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si (111) using ammonia-molecular beam epitaxy L Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, L Yiding, ... Journal of Applied Physics 117 (2), 2015 | 23 | 2015 |
| Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si (111) by ammonia molecular beam epitaxy N Dharmarasu, K Radhakrishnan, M Agrawal, L Ravikiran, S Arulkumaran, ... Applied physics express 5 (9), 091003, 2012 | 22 | 2012 |
| AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu Japanese Journal of Applied Physics 58 (SC), SCCD23, 2019 | 20 | 2019 |
| Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran Thin Solid Films 520 (24), 7109-7114, 2012 | 15 | 2012 |
| Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering S Patwal, M Agrawal, K Radhakrishnan, TLA Seah, N Dharmarasu physica status solidi (a) 217 (7), 1900818, 2020 | 14 | 2020 |
| Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si (111) L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ... Semiconductor Science and Technology 31 (9), 095003, 2016 | 14 | 2016 |
| Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si (111) by plasma assisted molecular beam epitaxy M Agrawal, K Radhakrishnan, N Dharmarasu, SS Pramana Japanese Journal of Applied Physics 54 (6), 065701, 2015 | 14 | 2015 |
| Mid-Infrared GaN/AlGaN quantum cascade detector grown on silicon B Dror, Y Zheng, M Agrawal, K Radhakrishnan, M Orenstein, G Bahir IEEE Electron Device Letters 40 (2), 263-266, 2018 | 13 | 2018 |
| A study on GaSi interdiffusion during (Al) GaN/AlN growth on Si by plasma assisted molecular beam epitaxy Y Zheng, M Agrawal, N Dharmarasu, K Radhakrishnan, S Patwal Applied Surface Science 481, 319-326, 2019 | 11 | 2019 |
| Non-linear thermal resistance model for the simulation of high power GaN-based devices S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, K Ranjan, M Agrawal, ... Semiconductor Science and Technology 36 (5), 055002, 2021 | 10 | 2021 |
| In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron … R Lingaparthi, N Dharmarasu, K Radhakrishnan, M Agrawal Thin Solid Films 708, 138128, 2020 | 10 | 2020 |
| Pt/AlGaN/GaN HEMT based ammonia gas sensors A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu 2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5, 2019 | 9 | 2019 |
| Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si (111) L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, ... Journal of Applied Physics 114 (12), 2013 | 9 | 2013 |
| Effect of stress mitigating layers on the structural properties of GaN grown by ammonia molecular beam epitaxy on 100 mm Si (111) L Ravikiran, M Agrawal, N Dharmarasu, K Radhakrishnan Japanese Journal of Applied Physics 52 (8S), 08JE05, 2013 | 9 | 2013 |
| Realization of two‐dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA‐MBE N Dharmarasu, K Radhakrishnan, ZZ Sun, M Agrawal physica status solidi c 8 (7‐8), 2075-2077, 2011 | 9 | 2011 |
| AlGaN/GaN HEMT grown on SiC with carbon doped GaN buffer by MOCVD N Dharmarasu, GS Karthikeyan, M Agrawal, STL Alex, K Radhakrishnan 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 434-436, 2019 | 8 | 2019 |
| Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy M Agrawal, L Ravikiran, N Dharmarasu, K Radhakrishnan, ... AIP Advances 7 (1), 2017 | 6 | 2017 |
| Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si (111) L Ravikiran, K Radhakrishnan, S Munawar Basha, N Dharmarasu, ... Journal of Applied Physics 117 (24), 2015 | 6 | 2015 |
| Design and fabrication of planar gunn nanodiodes based on doped GaN J Mateos, T González, I Iniguez-De-La-Torre, S García, S Pérez, ... 2019 IEEE Asia-Pacific Microwave Conference (APMC), 971-973, 2019 | 5 | 2019 |
