Antonio H. Castro Neto
Antonio H. Castro Neto
Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore
Verified email at - Homepage
TitleCited byYear
The electronic properties of graphene
AHC Neto, F Guinea, NMR Peres, KS Novoselov, AK Geim
Reviews of modern physics 81 (1), 109, 2009
Substrate-induced bandgap opening in epitaxial graphene
SY Zhou, GH Gweon, AV Fedorov, PN First, WA De Heer, DH Lee, ...
Nature materials 6 (10), 770, 2007
Making graphene visible
P Blake, EW Hill, AH Castro Neto, KS Novoselov, D Jiang, R Yang, ...
Applied physics letters 91 (6), 063124, 2007
Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect
EV Castro, KS Novoselov, SV Morozov, NMR Peres, JMBL Dos Santos, ...
Physical review letters 99 (21), 216802, 2007
Strong light-matter interactions in heterostructures of atomically thin films
L Britnell, RM Ribeiro, A Eckmann, R Jalil, BD Belle, A Mishchenko, ...
Science 340 (6138), 1311-1314, 2013
2D materials and van der Waals heterostructures
KS Novoselov, A Mishchenko, A Carvalho, AHC Neto
Science 353 (6298), aac9439, 2016
Electronic properties of disordered two-dimensional carbon
NMR Peres, F Guinea, AHC Neto
Physical Review B 73 (12), 125411, 2006
Gate-tuning of graphene plasmons revealed by infrared nano-imaging
Z Fei, AS Rodin, GO Andreev, W Bao, AS McLeod, M Wagner, LM Zhang, ...
Nature 487 (7405), 82, 2012
Strain-induced pseudo–magnetic fields greater than 300 tesla in graphene nanobubbles
N Levy, SA Burke, KL Meaker, M Panlasigui, A Zettl, F Guinea, AHC Neto, ...
Science 329 (5991), 544-547, 2010
Tight-binding approach to uniaxial strain in graphene
VM Pereira, AHC Neto, NMR Peres
Physical Review B 80 (4), 045401, 2009
Strain-induced gap modification in black phosphorus
AS Rodin, A Carvalho, AHC Neto
Physical review letters 112 (17), 176801, 2014
Electron-electron interactions in graphene: Current status and perspectives
VN Kotov, B Uchoa, VM Pereira, F Guinea, AHC Neto
Reviews of Modern Physics 84 (3), 1067, 2012
Electric field effect in ultrathin black phosphorus
SP Koenig, RA Doganov, H Schmidt, AH Castro Neto, B Oezyilmaz
Applied Physics Letters 104 (10), 103106, 2014
Strain engineering of graphene’s electronic structure
VM Pereira, AHC Neto
Physical Review Letters 103 (4), 046801, 2009
Graphene bilayer with a twist: electronic structure
JMBL Dos Santos, NMR Peres, AHC Neto
Physical review letters 99 (25), 256802, 2007
Observation of Van Hove singularities in twisted graphene layers
G Li, A Luican, JMBL Dos Santos, AHC Neto, A Reina, J Kong, EY Andrei
Nature Physics 6 (2), 109, 2010
Electronic states and Landau levels in graphene stacks
F Guinea, AHC Neto, NMR Peres
Physical Review B 73 (24), 245426, 2006
Electron tunneling through ultrathin boron nitride crystalline barriers
L Britnell, RV Gorbachev, R Jalil, BD Belle, F Schedin, MI Katsnelson, ...
Nano letters 12 (3), 1707-1710, 2012
Disorder induced localized states in graphene
VM Pereira, F Guinea, JMBL Dos Santos, NMR Peres, AHC Neto
Physical review letters 96 (3), 036801, 2006
Tunable phonon polaritons in atomically thin van der Waals crystals of boron nitride
S Dai, Z Fei, Q Ma, AS Rodin, M Wagner, AS McLeod, MK Liu, W Gannett, ...
Science 343 (6175), 1125-1129, 2014
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