| Preparation and characterization of nanocrystalline ZnO based materials for varistor applications RN Viswanath, S Ramasamy, R Ramamoorthy, P Jayavel, T Nagarajan Nanostructured Materials 6 (5-8), 993-996, 1995 | 124 | 1995 |
| Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots P Jayavel, H Tanaka, T Kita, O Wada, H Ebe, M Sugawara, J Tatebayashi, ... Applied physics letters 84 (11), 1820-1822, 2004 | 71 | 2004 |
| Growth of organic molecular single crystal trans-stilbene by selective self seeding from vertical Bridgman technique A Arulchakkaravarthi, P Jayavel, P Santhanaraghavan, P Ramasamy Journal of crystal growth 234 (1), 159-163, 2002 | 40 | 2002 |
| Scaling the aspect ratio of nanoscale closely packed silicon vias by macetch: kinetics of carrier generation and mass transport JD Kim, PK Mohseni, K Balasundaram, S Ranganathan, J Pachamuthu, ... Advanced Functional Materials 27 (12), 1605614, 2017 | 30 | 2017 |
| Investigations on the effect of alpha particle irradiation-induced defects near Pd/n-GaAs interface P Jayavel, J Kumar, K Santhakumar, P Magudapathy, KGM Nair Vacuum 57 (1), 51-59, 2000 | 30 | 2000 |
| Electrical characterisation of high energy 12C irradiated Au/n-GaAs Schottky barrier diodes P Jayavel, M Udhayasankar, J Kumar, K Asokan, D Kanjilal Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 28 | 1999 |
| Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon XL Jeong Dong Kim, Munho Kim, Lingyu Kong, Parsian K. Mohseni, Srikanth ... Applied Materials and Interfaces 10 (10), 9116-9122, 2018 | 27* | 2018 |
| Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0. 5Sb0. 5 epilayers grown on GaAs (0 0 1) S Nakamura, P Jayavel, T Koyama, Y Hayakawa Journal of crystal growth 300 (2), 497-502, 2007 | 25 | 2007 |
| Study on the performance of SI-GaAs and SI-InP surface barrier detectors for alpha and gamma detection P Jayavel, S Ghosh, A Jhingan, DK Avasthi, K Asokan, J Kumar Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2000 | 25 | 2000 |
| Investigations on the growth of anthracene and trans-stilbene single crystals using vertical Bridgman technique A Arulchakkaravarthi, CK Lakshmanaperumal, P Santhanaraghavan, ... Materials Science and Engineering: B 95 (3), 236-241, 2002 | 22 | 2002 |
| Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics N Dharmarasu, S Arulkumaran, RR Sumathi, P Jayavel, J Kumar, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998 | 21 | 1998 |
| Improved electrical properties on the anodic oxide/InP interface for MOS structures RR Sumathi, N Dharmarasu, S Arulkumaran, P Jayavel, J Kumar Journal of electronic materials 27, 1358-1361, 1998 | 18 | 1998 |
| Studies on the proton irradiation induced defects on Ni/n-GaAs Schottky barrier diodes P Jayavel, K Santhakumar, J Kumar Physica B: Condensed Matter 315 (1-3), 88-95, 2002 | 17 | 2002 |
| Optical polarization properties of InAs/GaAs quantum dot semiconductor optical amplifier P Jayavel, T Kita, O Wada, H Ebe, M Sugawara, Y Arakawa, Y Nakata, ... Japanese journal of applied physics 44 (4S), 2528, 2005 | 16 | 2005 |
| Polarization controlled edge emission from columnar InAs/GaAs self‐assembled quantum dots T Kita, P Jayavel, O Wada, H Ebe, Y Nakata, M Sugawara physica status solidi (c), 1137-1140, 2003 | 13 | 2003 |
| Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs (001) P Jayavel, S Nakamura, T Koyama, Y Hayakawa physica status solidi c 3 (8), 2685-2688, 2006 | 12 | 2006 |
| Improved sensitivity of optical frequency domain reflectometry-optical coherence tomography using a semiconductor optical amplifier P Jayavel, T Amano, DH Choi, H Furukawa, H Hiro-Oka, K Asaka, ... Japanese journal of applied physics 45 (12L), L1317, 2006 | 11 | 2006 |
| On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs P Jayavel, J Kumar, P Ramasam, R Premanand NISCAIR-CSIR, India, 2000 | 11 | 2000 |
| Discretely swept optical-frequency domain imaging toward high-resolution, high-speed, high-sensitivity, and long-depth-range K Ohbayashi, T Amano, H Hiro-Oka, H Furukawa, D Choi, P Jayavel, ... Coherence Domain Optical Methods and Optical Coherence Tomography in …, 2007 | 9 | 2007 |
| Influence of arsenic temperature on the structural and electrical characteristics of InAsSb layers grown on GaAs by hot wall epitaxy S Nakamura, P Jayavel, T Koyama, M Kumagawa, Y Hayakawa Journal of crystal growth 274 (3-4), 362-366, 2005 | 9 | 2005 |
haris muthiahAssociate Professor of Physics, Karunya Institute of Technology and SciencesE-mail confirmado em karunya.edu
