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277 1978 Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth S Fukatsu, K Fujita, H Yaguchi, Y Shiraki, R Ito
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257 1991 Longitudinal-mode behaviors of mode-stabilized Al Ga As injection lasers M Nakamura, K Aiki, N Chinone, R Ito, J Umeda
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240 1978 MOVPE growth of cubic GaN on GaAs using dimethylhydrazine S Miyoshi, K Onabe, N Ohkouchi, H Yaguchi, R Ito, S Fukatsu, Y Shiraki
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210 1992 Biexciton lasing in the layered perovskite-type material (C6H13NH3) 2PbI4 T Kondo, T Azuma, T Yuasa, R Ito
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166 1998 Longitudinal mode competition and asymmetric gain saturation in semiconductor injection lasers. II. Theory N Ogasawara, R Ito
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141 1998 Second-order nonlinear susceptibilities of various dielectric and semiconductor materials I Shoji, T Kondo, R Ito
Optical and Quantum Electronics 34, 797-833, 2002
129 2002 Metalorganic vapor phase epitaxy of GaP1−x Nx alloys on GaP S Miyoshi, H Yaguchi, K Onabe, R Ito, Y Shiraki
Applied physics letters 63 (25), 3506-3508, 1993
127 1993 Determination of quadratic nonlinear optical coefficient of Alx Ga1−x As system by the method of reflected second harmonics M Ohashi, T Kondo, R Ito, S Fukatsu, Y Shiraki, K Kumata, SS Kano
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Japanese journal of applied physics 22 (5A), L310, 1983
106 1983 Two-dimensional Wannier excitons in a layered-perovskite-type crystal (C6H13NH3) 2PbI4 K Tanaka, F Sano, T Takahashi, T Kondo, R Ito, K Ema
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105 2002 GaAs/Ge/GaAs sublattice reversal epitaxy on GaAs (100) and (111) substrates for nonlinear optical devices SKS Koh, TKT Kondo, MEM Ebihara, TIT Ishiwada, HSH Sawada, ...
Japanese journal of applied physics 38 (5A), L508, 1999
105 1999 Buried-heterostructure AlGaAs lasers K Saito, R Ito
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104 1980 Photoluminescence properties of cubic GaN grown on GaAs (100) substrates by metalorganic vapor phase epitaxy J Wu, H Yaguchi, K Onabe, R Ito, Y Shiraki
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