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C.W. Tu
C.W. Tu
Electrical and Computer Engineering, Univesity of California, San Diego
E-mail confirmado em ucsd.edu
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Bowing parameter of the band-gap energy of
WG Bi, CW Tu
Applied Physics Letters 70 (12), 1608-1610, 1997
5041997
Chemical mapping of semiconductor interfaces at near-atomic resolution
A Ourmazd, DW Taylor, J Cunningham, CW Tu
Physical review letters 62 (8), 933, 1989
3851989
Ultrafast phase relaxation of excitons via exciton-exciton and exciton-electron collisions
L Schultheis, J Kuhl, A Honold, CW Tu
Physical review letters 57 (13), 1635, 1986
3841986
Collision broadening of two-dimensional excitons in a GaAs single quantum well
A Honold, L Schultheis, J Kuhl, CW Tu
Physical Review B 40 (9), 6442, 1989
3591989
Density of states and de haas—van alphen effect in two-dimensional electron systems
JP Eisenstein, HL Stormer, V Narayanamurti, AY Cho, AC Gossard, ...
Physical review letters 55 (8), 875, 1985
3531985
Optical dephasing of homogeneously broadened two-dimensional exciton transitions in GaAs quantum wells
L Schultheis, A Honold, J Kuhl, K Köhler, CW Tu
Physical Review B 34 (12), 9027, 1986
3231986
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
IA Buyanova, WM Chen, G Pozina, JP Bergman, B Monemar, HP Xin, ...
Applied physics letters 75 (4), 501-503, 1999
3221999
Nature of the fundamental band gap in alloys
W Shan, W Walukiewicz, KM Yu, J Wu, JW Ager III, EE Haller, HP Xin, ...
Applied Physics Letters 76 (22), 3251-3253, 2000
3182000
Donor neutralization in GaAs (Si) by atomic hydrogen
J Chevallier, WC Dautremont‐Smith, CW Tu, SJ Pearton
Applied physics letters 47 (2), 108-110, 1985
2841985
GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
HP Xin, CW Tu
Applied physics letters 72 (19), 2442-2444, 1998
2751998
Lifetime enhancement of two-dimensional excitons by the quantum-confined Stark effect
HJ Polland, L Schultheis, J Kuhl, EO Göbel, CW Tu
Physical review letters 55 (23), 2610, 1985
2501985
Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs
M Sopanen, HP Xin, CW Tu
Applied Physics Letters 76 (8), 994-996, 2000
2242000
Photonic-wire laser
JP Zhang, DY Chu, SL Wu, ST Ho, WG Bi, CW Tu, RC Tiberio
Physical review letters 75 (14), 2678, 1995
2241995
Direct determination of electron effective mass in GaNAs/GaAs quantum wells
PN Hai, WM Chen, IA Buyanova, HP Xin, CW Tu
Applied Physics Letters 77 (12), 1843-1845, 2000
2142000
Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wells
DY Oberli, J Shah, TC Damen, CW Tu, TY Chang, DAB Miller, JE Henry, ...
Physical Review B 40 (5), 3028, 1989
2141989
Hydrogenation of shallow‐donor levels in GaAs
SJ Pearton, WC Dautremont‐Smith, J Chevallier, CW Tu, KD Cummings
Journal of applied physics 59 (8), 2821-2827, 1986
2111986
Picosecond phase coherence and orientational relaxation of excitons in GaAs
L Schultheis, J Kuhl, A Honold, CW Tu
Physical review letters 57 (14), 1797, 1986
2061986
Effects of nitrogen on the band structure of alloys
HP Xin, CW Tu, Y Zhang, A Mascarenhas
Applied Physics Letters 76 (10), 1267-1269, 2000
1912000
Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs
E Batke, D Heitmann, CW Tu
Physical Review B 34 (10), 6951, 1986
1881986
Formation of an impurity band and its quantum confinement in heavily doped GaAs: N
Y Zhang, A Mascarenhas, HP Xin, CW Tu
Physical Review B 61 (11), 7479, 2000
1822000
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