Impact of Temperature on the Resistive Switching Behavior of Embedded C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...
IEEE transactions on electron devices 58 (9), 3124-3131, 2011
271 2011 Towards forming-free resistive switching in oxygen engineered HfO2− x SU Sharath, T Bertaud, J Kurian, E Hildebrandt, C Walczyk, P Calka, ...
Applied physics letters 104 (6), 2014
182 2014 Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures M Sowinska, T Bertaud, D Walczyk, S Thiess, MA Schubert, M Lukosius, ...
Applied Physics Letters 100 (23), 2012
114 2012 Room‐Temperature Atomic Layer Deposition of Al2 O3 : Impact on Efficiency, Stability and Surface Properties in Perovskite Solar Cells M Kot, C Das, Z Wang, K Henkel, Z Rouissi, K Wojciechowski, HJ Snaith, ...
ChemSusChem 9 (24), 3401-3406, 2016
86 2016 In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy T Bertaud, M Sowinska, D Walczyk, S Thiess, A Gloskovskii, C Walczyk, ...
Applied Physics Letters 101 (14), 2012
79 2012 Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells D Walczyk, C Walczyk, T Schroeder, T Bertaud, M Sowińska, M Lukosius, ...
Microelectronic Engineering 88 (7), 1133-1135, 2011
79 2011 Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory. P Calka, M Sowinska, T Bertaud, D Walczyk, J Dabrowski, P Zaumseil, ...
ACS applied materials & interfaces 6 (7), 5056-5060, 2014
63 2014 In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN … M Sowinska, T Bertaud, D Walczyk, S Thiess, P Calka, L Alff, C Walczyk, ...
Journal of Applied Physics 115 (20), 2014
62 2014 Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material T Bertaud, D Walczyk, C Walczyk, S Kubotsch, M Sowinska, T Schroeder, ...
Thin Solid Films 520 (14), 4551-4555, 2012
54 2012 Understanding the growth mechanism of graphene on Ge/Si (001) surfaces J Dabrowski, G Lippert, J Avila, J Baringhaus, I Colambo, YS Dedkov, ...
Scientific reports 6 (1), 31639, 2016
51 2016 Room‐Temperature Atomic‐Layer‐Deposited Al2 O3 Improves the Efficiency of Perovskite Solar Cells over Time M Kot, L Kegelmann, C Das, P Kus, N Tsud, I Matolinova, S Albrecht, ...
ChemSusChem 11 (20), 3640-3648, 2018
42 2018 Localized defect states and charge trapping in atomic layer deposited-Al2O3 films K Henkel, M Kot, D Schmeißer
Journal of Vacuum Science & Technology A 35 (1), 2017
36 2017 Atomic layer-deposited aluminum oxide hinders iodide migration and stabilizes perovskite solar cells C Das, M Kot, T Hellmann, C Wittich, E Mankel, I Zimmermann, ...
Cell Reports Physical Science 1 (7), 2020
29 2020 Tailoring optical and electrical properties of thin-film coatings based on mixed Hf and Ti oxides for optoelectronic application A Obstarczyk, D Kaczmarek, D Wojcieszak, M Mazur, J Domaradzki, ...
Materials & Design 175, 107822, 2019
25 2019 Evidence of Nitrogen Contribution to the Electronic Structure of the CH3 NH3 PbI3 Perovskite M Kot, K Wojciechowski, H Snaith, D Schmeißer
Chemistry–A European Journal 24 (14), 3539-3544, 2018
25 2018 Analysis of nitrogen species in titanium oxynitride ALD films M Sowińska, S Brizzi, C Das, I Kärkkänen, J Schneidewind, F Naumann, ...
Applied Surface Science 381, 42-47, 2016
24 2016 Resistive switching behavior in TiN/HfO2 /Ti/TiN devices D Walczyk, T Bertaud, M Sowinska, M Lukosius, MA Schubert, A Fox, ...
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG), 143-146, 2012
24 2012 Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study M Sowińska, K Henkel, D Schmeißer, I Kärkkänen, J Schneidewind, ...
Journal of Vacuum Science & Technology A 34 (1), 2016
23 2016 Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition M Kot, K Henkel, C Das, S Brizzi, I Kärkkänen, J Schneidewind, ...
Surface and Coatings Technology 324, 586-593, 2017
19 2017 Atomic Layer Engineering of Aluminum‐Doped Zinc Oxide Films for Efficient and Stable Perovskite Solar Cells J Kruszyńska, J Ostapko, V Ozkaya, B Surucu, O Szawcow, K Nikiforow, ...
Advanced Materials Interfaces 9 (17), 2200575, 2022
18 2022 
Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinE-mail confirmado em ikz-berlin.de
