GaN MSM UV photodetectors with titanium tungsten transparent electrodes CK Wang, SJ Chang, YK Su, YZ Chiou, SC Chen, CS Chang, TK Lin, ... IEEE Transactions on Electron Devices 53 (1), 38-42, 2005 | 74 | 2005 |
Photo-CVD SiO/sub 2/layers on AlGaN and AlGaN-GaN MOSHFET YZ Chiou, SJ Chang, YK Su, CK Wang, TK Lin, BR Huang IEEE Transactions on Electron Devices 50 (8), 1748-1752, 2003 | 63 | 2003 |
GaN-based light-emitting diode with sputtered AlN nucleation layer CH Yen, WC Lai, YY Yang, CK Wang, TK Ko, SJ Hon, SJ Chang IEEE Photonics Technology Letters 24 (4), 294-296, 2011 | 56 | 2011 |
High detectivity GaN metal–semiconductor–metal UV photodetectors with transparent tungsten electrodes CK Wang, SJ Chang, YK Su, YZ Chiou, CS Chang, TK Lin, HL Liu, ... Semiconductor science and technology 20 (6), 485, 2005 | 53 | 2005 |
GaN MSM photodetectors with TiW transparent electrodes CK Wang, SJ Chang, YK Su, CS Chang, YZ Chiou, CH Kuo, TK Lin, ... Materials Science and Engineering: B 112 (1), 25-29, 2004 | 48 | 2004 |
Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes CD Yerino, Y Zhang, B Leung, ML Lee, TC Hsu, CK Wang, WC Peng, ... Applied Physics Letters 98 (25), 2011 | 44 | 2011 |
GaN MSM UV photodetector with sputtered AlN nucleation layer CK Wang, YZ Chiou, SJ Chang, WC Lai, SP Chang, CH Yen, CC Hung IEEE Sensors Journal 15 (9), 4743-4748, 2015 | 42 | 2015 |
ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates TK Lin, SJ Chang, YK Su, YZ Chiou, CK Wang, SP Chang, CM Chang, ... Materials Science and Engineering: B 119 (2), 202-205, 2005 | 34 | 2005 |
InGaN quantum dot photodetectors LW Ji, YK Su, SJ Chang, SH Liu, CK Wang, ST Tsai, TH Fang, LW Wu, ... Solid-State Electronics 47 (10), 1753-1756, 2003 | 34 | 2003 |
Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers TK Lin, SJ Chang, YZ Chiou, CK Wang, SP Chang, KT Lam, YS Sun, ... Solid-State Electronics 50 (5), 750-753, 2006 | 25 | 2006 |
ZnSe homoepitaxial MSM photodetectors with transparent ITO contact electrodes TK Lin, SJ Chang, YK Su, YZ Chiou, CK Wang, CM Chang, BR Huang IEEE transactions on electron devices 52 (1), 121-123, 2004 | 25 | 2004 |
Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes SJ Chang, TK Lin, YK Su, YZ Chiou, CK Wang, SP Chang, CM Chang, ... Materials Science and Engineering: B 127 (2-3), 164-168, 2006 | 24 | 2006 |
Nitride-based blue LEDs with GaN/SiN double buffer layers CH Kuo, SJ Chang, YK Su, CK Wang, LW Wu, JK Sheu, TC Wen, WC Lai, ... Solid-State Electronics 47 (11), 2019-2022, 2003 | 24 | 2003 |
GaN-based ultraviolet light emitting diodes with ex situ sputtered AlN nucleation layer WC Lai, CH Yen, YY Yang, CK Wang, SJ Chang Journal of Display Technology 9 (11), 895-899, 2013 | 21 | 2013 |
Investigating the effect of piezoelectric polarization on GaN-based LEDs with different quantum barrier thickness CK Wang, TH Chiang, KY Chen, YZ Chiou, TK Lin, SP Chang, SJ Chang Journal of Display Technology 9 (4), 207-211, 2013 | 21 | 2013 |
The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors CK Wang, TK Ko, CS Chang, SJ Chang, YK Su, TC Wen, CH Kuo, ... IEEE photonics technology letters 17 (10), 2161-2163, 2005 | 20 | 2005 |
Optoelectronic device and method for manufacturing the same WC Peng, MH Hsieh, MC Hsu, WY Yen, CK Wang, YC Chen, SJ Hon, ... US Patent 8,519,430, 2013 | 19 | 2013 |
AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide CK Wang, YZ Chiou, SJ Chang, YK Su, BR Huang, TK Lin, SC Chen Journal of electronic materials 32, 407-410, 2003 | 19 | 2003 |
High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer CK Wang, RW Chuang, SJ Chang, YK Su, SC Wei, TK Lin, TK Ko, ... Materials Science and Engineering: B 119 (1), 25-28, 2005 | 16 | 2005 |
GaN MIS capacitors with photo-CVD SiN x O y insulating layers SJ Chang, CK Wang, YK Su, CS Chang, TK Lin, TK Ko, HL Liu Journal of The Electrochemical Society 152 (6), G423, 2005 | 15 | 2005 |