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Yue Kuo
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Thin film transistors: materials and processes
Y Kuo
Kluwer academic publishers 1, 241-271, 2004
326*2004
Facing the headaches of early failures: A state-of-the-art review of burn-in decisions
W Kuo, Y Kuo
Proceedings of the IEEE 71 (11), 1257-1266, 1983
1791983
Thin film transistor technology—Past, present, and future
Y Kuo
The Electrochemical Society Interface 22 (1), 55, 2013
1662013
Reactive ion etching of sputter deposited tantalum oxide and its etch selectivity to tantalum
Y Kuo
Journal of the Electrochemical Society 139 (2), 579, 1992
891992
PECVD silicon nitride as a gate dielectric for amorphous silicon thin film transistor: process and device performance
Y Kuo
Journal of The Electrochemical Society 142 (1), 186, 1995
801995
Room-temperature copper etching based on a plasma–copper reaction
Y Kuo, S Lee
Applied Physics Letters 78 (7), 1002-1004, 2001
792001
Sub 2 nm thick zirconium doped hafnium oxide high-k gate dielectrics
Y Kuo, J Lu, J Yan, T Yuan, HC Kim, J Peterson, M Gardner, S Chatterjee, ...
ECS Transactions 1 (5), 447, 2006
782006
Electrical and physical characterization of zirconium-doped tantalum oxide thin films
JY Tewg, Y Kuo, J Lu, BW Schueler
Journal of the Electrochemical Society 151 (3), F59, 2004
772004
Chlorine plasma/copper reaction in a new copper dry etching process
S Lee, Y Kuo
Journal of The Electrochemical Society 148 (9), G524, 2001
752001
Zirconium-doped hafnium oxide high-k dielectrics with subnanometer equivalent oxide thickness by reactive sputtering
J Yan, Y Kuo, J Lu
Electrochemical and solid-state letters 10 (7), H199, 2007
702007
Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress
S Chatterjee, Y Kuo, J Lu, JY Tewg, P Majhi
Microelectronics Reliability 46 (1), 69-76, 2006
682006
Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous silicon
Y Kuo, PM Kozlowski
Applied physics letters 69 (8), 1092-1094, 1996
681996
Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness
J Lu, Y Kuo
Applied Physics Letters 87 (23), 2005
662005
A novel plasma-based copper dry etching method
Y Kuo, S Lee
Japanese Journal of Applied Physics 39 (3A), L188, 2000
662000
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—A critical review
Y Kuo
Vacuum 51 (4), 741-745, 1998
661998
A light emitting device made from thin zirconium-doped hafnium oxide high-k dielectric film with or without an embedded nanocrystal layer
Y Kuo, CC Lin
Applied Physics Letters 102 (3), 2013
652013
Reactive ion etching of PECVD amorphous silicon and silicon nitride thin films with fluorocarbon gases
Y Kuo
Journal of the Electrochemical Society 137 (4), 1235, 1990
631990
Thin-film transistor and ultra-large scale integrated circuit: Competition or collaboration
Y Kuo
Japanese journal of applied physics 47 (3S), 1845, 2008
622008
Suppression of crystallization of tantalum oxide thin film by doping with zirconium
JY Tewg, Y Kuo, J Lu
Electrochemical and solid-state letters 8 (1), G27, 2004
622004
Hafnium-doped tantalum oxide high-k gate dielectrics
J Lu, Y Kuo, JY Tewg
Journal of the Electrochemical Society 153 (5), G410, 2006
592006
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