Formation of moiré interlayer excitons in space and time D Schmitt, JP Bange, W Bennecke, AA AlMutairi, G Meneghini, ...
Nature 608 (7923), 499-503, 2022
93 2022 Label-Free and Recalibrated Multilayer MoS2 Biosensor for Point-of-Care Diagnostics H Park, G Han, SW Lee, H Lee, SH Jeong, M Naqi, AA AlMutairi, YJ Kim, ...
ACS applied materials & interfaces 9 (50), 43490-43497, 2017
75 2017 PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices AA AlMutairi, D Yin, Y Yoon
IEEE Electron Device Letters 39 (1), 151-154, 2017
50 2017 On MoS2 Thin-Film Transistor Design Consideration for a NO2 Gas Sensor H Im, AA AlMutairi, S Kim, M Sritharan, S Kim, Y Yoon
ACS sensors 4 (11), 2930-2936, 2019
29 2019 In situ studies of germanium-tin and silicon-germanium-tin thermal stability JH Fournier-Lupien, D Chagnon, P Lévesque, AAA AlMutairi, S Wirths, ...
ECS Transactions 64 (6), 903, 2014
26 2014 Assessment of high-frequency performance limit of black phosphorus field-effect transistors D Yin, AA AlMutairi, Y Yoon
IEEE Transactions on Electron Devices 64 (7), 2984-2991, 2017
24 2017 A Wafer‐Scale Nanoporous 2D Active Pixel Image Sensor Matrix with High Uniformity, High Sensitivity, and Rapid Switching H Park, A Sen, M Kaniselvan, AA AlMutairi, A Bala, LP Lee, Y Yoon, S Kim
Advanced Materials 35 (14), 2210715, 2023
21 2023 Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors H Park, J Lee, G Han, AA AlMutairi, YH Kim, J Lee, YM Kim, YJ Kim, ...
Communications Materials 2 (1), 94, 2021
20 2021 Assessment of germanane field-effect transistors for CMOS technology Y Zhao, AA AlMutairi, Y Yoon
IEEE Electron Device Letters 38 (12), 1743-1746, 2017
16 2017 Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware D Joksas, AA AlMutairi, O Lee, M Cubukcu, A Lombardo, H Kurebayashi, ...
Advanced Intelligent Systems 4 (8), 2200068, 2022
15 2022 Performance limit projection of germanane field-effect transistors AA AlMutairi, Y Zhao, D Yin, Y Yoon
IEEE Electron Device Letters 38 (5), 673-676, 2017
14 2017 High-responsivity reduced graphene oxide gel photodetectors for visible-light detection with a large detection area and an end-contact interface D Alsaedi, M Irannejad, KH Ibrahim, A Almutairi, O Ramahi, M Yavuz
Journal of Materials Chemistry C 5 (4), 882-888, 2017
14 2017 Ultrafast dynamics of bright and dark excitons in monolayer WSe2 and heterobilayer WSe2/MoS2 JP Bange, P Werner, D Schmitt, W Bennecke, G Meneghini, AA AlMutairi, ...
2D Materials 10 (3), 035039, 2023
7 2023 Device Performance Assessment of Monolayer HfSe2 : A New Layered Material Compatible With High- HfO2 AA AlMutairi, Y Yoon
IEEE Electron Device Letters 39 (11), 1772-1775, 2018
6 2018 High operation stability and different sensing mechanisms in graphene oxide gel photodetectors utilizing a thin polymeric layer D Alsaedi, M Irannejad, K Ibrahim, AA AlMutairi, K Musselman, ...
ACS Applied Electronic Materials 2 (5), 1203-1209, 2020
3 2020 Ultrafast nano-imaging of dark excitons D Schmitt, JP Bange, W Bennecke, G Meneghini, AA AlMutairi, ...
arXiv preprint arXiv:2305.18908, 2023
2 2023 Probing correlations in the exciton landscape of a moir\'e heterostructure JP Bange, D Schmitt, W Bennecke, G Meneghini, AA AlMutairi, ...
arXiv preprint arXiv:2303.17886, 2023
2 2023 Probing electron-hole Coulomb correlations in the exciton landscape of a twisted semiconductor heterostructure JP Bange, D Schmitt, W Bennecke, G Meneghini, AA AlMutairi, ...
Science Advances 10 (6), eadi1323, 2024
1 2024 Memristors, Spintronics and 2D Materials for Future Computing Systems D Joksas, A AlMutairi, O Lee, M Cubukcu, A Lombardo, H Kurebayashi, ...
arXiv preprint arXiv:2203.06147, 2022
1 2022 Oxidation of van-der-Waals Semiconductors for Neuromorphic Technology A Xhameni, AA AlMutairi, A Lombardo
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 529-531, 2023
2023