T. Tiedje or J. T. Tiedje
T. Tiedje or J. T. Tiedje
Electrical and Computer Engineering, Faculty of Engineering, University of Victoria, Victoria, BC
E-mail confirmado em uvic.ca
Citado por
Citado por
Disorder and the optical-absorption edge of hydrogenated amorphous silicon
GD Cody, T Tiedje, B Abeles, B Brooks, Y Goldstein
Physical Review Letters 47 (20), 1480, 1981
Limiting efficiency of silicon solar cells
TOM Tiedje, ELI Yablonovitch, GD Cody, BG Brooks
IEEE Transactions on electron devices 31 (5), 711-716, 1984
A physical interpretation of dispersive transport in disordered semiconductors
T Tiedje, A Rose
Solid State Communications 37 (1), 49-52, 1981
Evidence for exponential band tails in amorphous silicon hydride
T Tiedje, JM Cebulka, DL Morel, B Abeles
Physical Review Letters 46 (21), 1425, 1981
Amorphous semiconductor superlattices
B Abeles, T Tiedje
Physical Review Letters 51 (21), 2003, 1983
Molecular beam epitaxy growth of
S Tixier, M Adamcyk, T Tiedje, S Francoeur, A Mascarenhas, P Wei, ...
Applied physics letters 82 (14), 2245-2247, 2003
Band gap of
S Francoeur, MJ Seong, A Mascarenhas, S Tixier, M Adamcyk, T Tiedje
Applied physics letters 82 (22), 3874-3876, 2003
Giant spin-orbit bowing in GaAs 1− x Bi x
B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje
Physical review letters 97 (6), 067205, 2006
Laser Stark spectroscopy in the 10 [mu] m region: The [nu] 3 bands of CH3F
SM Freund, G Duxbury, M Romheld, JT Tiedje, T Oka
Journal of Molecular Spectroscopy 52 (1), 38-57, 1974
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
DD Perovic, MR Castell, A Howie, C Lavoie, T Tiedje, JSW Cole
Ultramicroscopy 58 (1), 104-113, 1995
Temperature dependence of the Urbach edge in GaAs
SR Johnson, T Tiedje
Journal of applied physics 78 (9), 5609-5613, 1995
Composition dependence of photoluminescence of alloys
X Lu, DA Beaton, RB Lewis, T Tiedje, Y Zhang
Applied physics letters 95 (4), 041903, 2009
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje, SJ Sweeney
Journal of Applied Physics 111 (11), 113108, 2012
Optical absorption edge of semi-insulating GaAs and InP at high temperatures
M Beaudoin, AJG DeVries, SR Johnson, H Laman, T Tiedje
Applied physics letters 70 (26), 3540-3542, 1997
Observation of leaky slab modes in an air-bridged semiconductor waveguide with a two-dimensional photonic lattice
M Kanskar, P Paddon, V Pacradouni, R Morin, A Busch, JF Young, ...
Applied physics letters 70 (11), 1438-1440, 1997
Effect of molecular beam epitaxy growth conditions on the Bi content of
X Lu, DA Beaton, RB Lewis, T Tiedje, MB Whitwick
Applied Physics Letters 92 (19), 192110, 2008
Recombination centers in phosphorous doped hydrogenated amorphous silicon
CR Wronski, B Abeles, T Tiedje, GD Cody
Solid State Communications 44 (10), 1423-1426, 1982
Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy
RB Lewis, M Masnadi-Shirazi, T Tiedje
Applied Physics Letters 101 (8), 082112, 2012
Preparation and characterization of B x C 1− x thin films with the graphite structure
BM Way, JR Dahn, T Tiedje, K Myrtle, M Kasrai
Physical Review B 46 (3), 1697, 1992
Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy
DG Cooke, FA Hegmann, EC Young, T Tiedje
Applied physics letters 89 (12), 122103, 2006
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