Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band DC Look, DC Walters, MO Manasreh, JR Sizelove, CE Stutz, KR Evans
Physical Review B 42 (6), 3578, 1990
355 1990 Semiconductor heterojunctions and nanostructures O Manasreh
McGraw-Hill, Inc., 2005
167 2005 Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 C: Observation of an EL2-like defect MO Manasreh, DC Look, KR Evans, CE Stutz
Physical Review B 41 (14), 10272, 1990
160 1990 Semiconductor quantum wells and superlattices for long-wavelength infrared detectors MO Manasreh
Artech House on Demand, 1993
121 1993 Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy J Wu, D Shao, VG Dorogan, AZ Li, S Li, EA DeCuir Jr, MO Manasreh, ...
Nano letters 10 (4), 1512-1516, 2010
108 2010 Temperature dependence of the band gap of colloidal A Joshi, KY Narsingi, MO Manasreh, EA Davis, BD Weaver
Applied physics letters 89 (13), 131907, 2006
106 2006 Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition MO Manasreh
Physical Review B 53 (24), 16425, 1996
97 1996 The EL2 defect in GaAs: Some recent developments MO Manasreh, DW Fischer, WC Mitchel
Physica Status Solidi B 154 (1), 11-41, 1989
87 1989 Surface plasmon enhanced intermediate band based quantum dots solar cell J Wu, SC Mangham, VR Reddy, MO Manasreh, BD Weaver
Solar energy materials and solar cells 102, 44-49, 2012
83 2012 Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy J Wu, Z Li, D Shao, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo, ...
Applied Physics Letters 94 (17), 171102, 2009
81 2009 Origin of the blueshift in the intersubband infrared absorption in GaAs/Al 0.3 Ga 0.7 As multiple quantum wells MO Manasreh, F Szmulowicz, T Vaughan, KR Evans, CE Stutz, ...
Physical Review B 43 (12), 9996, 1991
73 1991 Intersubband infrared absorption in a GaAs/Al0.3 Ga0.7 As quantum well structure MO Manasreh, F Szmulowicz, DW Fischer, KR Evans, CE Stutz
Applied physics letters 57 (17), 1790-1792, 1990
71 1990 Intermediate-band material based on GaAs quantum rings for solar cells J Wu, D Shao, Z Li, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo
Applied Physics Letters 95 (7), 071908, 2009
67 2009 III-V nitride semiconductors: Applications and devices TY Edward
CRC Press, 2002
61 2002 Dual broadband photodetector based on interband and intersubband transitions in InAs quantum dots embedded in graded InGaAs quantum wells BS Passmore, J Wu, MO Manasreh, GJ Salamo
Applied Physics Letters 91 (23), 233508, 2007
56 2007 Negative persistent photoconductivity in the Al0.6 Ga0.4 Sb/InAs quantum wells I Lo, WC Mitchel, MO Manasreh, CE Stutz, KR Evans
Applied physics letters 60 (6), 751-753, 1992
56 1992 Incorporation of carbon in heavily doped Alx 1−x As grown by metalorganic molecular beam epitaxy CR Abernathy, SJ Pearton, MO Manasreh, DW Fischer, DN Talwar
Applied physics letters 57 (3), 294-296, 1990
52 1990 Ion-beam-produced damage and its stability in AlN films SO Kucheyev, JS Williams, J Zou, C Jagadish, M Pophristic, S Guo, ...
Journal of applied physics 92 (7), 3554-3558, 2002
51 2002 Strong interband transitions in InAs quantum dots solar cell J Wu, YFM Makableh, R Vasan, MO Manasreh, B Liang, CJ Reyner, ...
Applied Physics Letters 100 (5), 051907, 2012
47 2012 Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles J Wu, S Lee, VR Reddy, MO Manasreh, BD Weaver, MK Yakes, ...
Materials Letters 65 (23-24), 3605-3608, 2011
47 2011 