Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band DC Look, DC Walters, MO Manasreh, JR Sizelove, CE Stutz, KR Evans
Physical Review B 42 (6), 3578, 1990
354 1990 Semiconductor heterojunctions and nanostructures O Manasreh
McGraw-Hill, Inc., 2005
163 2005 Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 C: Observation of an EL2-like defect MO Manasreh, DC Look, KR Evans, CE Stutz
Physical Review B 41 (14), 10272, 1990
159 1990 Semiconductor quantum wells and superlattices for long-wavelength infrared detectors MO Manasreh
Artech House on Demand, 1993
121 1993 Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy J Wu, D Shao, VG Dorogan, AZ Li, S Li, EA DeCuir Jr, MO Manasreh, ...
Nano letters 10 (4), 1512-1516, 2010
107 2010 Temperature dependence of the band gap of colloidal A Joshi, KY Narsingi, MO Manasreh, EA Davis, BD Weaver
Applied physics letters 89 (13), 131907, 2006
103 2006 Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition MO Manasreh
Physical Review B 53 (24), 16425, 1996
97 1996 The EL2 defect in GaAs: Some recent developments MO Manasreh, DW Fischer, WC Mitchel
Physica Status Solidi B 154 (1), 11-41, 1989
87 1989 Surface plasmon enhanced intermediate band based quantum dots solar cell J Wu, SC Mangham, VR Reddy, MO Manasreh, BD Weaver
Solar energy materials and solar cells 102, 44-49, 2012
83 2012 Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy J Wu, Z Li, D Shao, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo, ...
Applied Physics Letters 94 (17), 171102, 2009
81 2009 Origin of the blueshift in the intersubband infrared absorption in GaAs/Al 0.3 Ga 0.7 As multiple quantum wells MO Manasreh, F Szmulowicz, T Vaughan, KR Evans, CE Stutz, ...
Physical Review B 43 (12), 9996, 1991
72 1991 Intersubband infrared absorption in a GaAs/Al0.3 Ga0.7 As quantum well structure MO Manasreh, F Szmulowicz, DW Fischer, KR Evans, CE Stutz
Applied physics letters 57 (17), 1790-1792, 1990
71 1990 Intermediate-band material based on GaAs quantum rings for solar cells J Wu, D Shao, Z Li, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo
Applied Physics Letters 95 (7), 071908, 2009
66 2009 III-V nitride semiconductors: Applications and devices TY Edward
CRC Press, 2002
60 2002 Negative persistent photoconductivity in the Al0.6 Ga0.4 Sb/InAs quantum wells I Lo, WC Mitchel, MO Manasreh, CE Stutz, KR Evans
Applied physics letters 60 (6), 751-753, 1992
56 1992 Dual broadband photodetector based on interband and intersubband transitions in InAs quantum dots embedded in graded InGaAs quantum wells BS Passmore, J Wu, MO Manasreh, GJ Salamo
Applied Physics Letters 91 (23), 233508, 2007
55 2007 Incorporation of carbon in heavily doped Alx 1−x As grown by metalorganic molecular beam epitaxy CR Abernathy, SJ Pearton, MO Manasreh, DW Fischer, DN Talwar
Applied physics letters 57 (3), 294-296, 1990
52 1990 Ion-beam-produced damage and its stability in AlN films SO Kucheyev, JS Williams, J Zou, C Jagadish, M Pophristic, S Guo, ...
Journal of applied physics 92 (7), 3554-3558, 2002
49 2002 Strong interband transitions in InAs quantum dots solar cell J Wu, YFM Makableh, R Vasan, MO Manasreh, B Liang, CJ Reyner, ...
Applied Physics Letters 100 (5), 051907, 2012
46 2012 Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles J Wu, S Lee, VR Reddy, MO Manasreh, BD Weaver, MK Yakes, ...
Materials Letters 65 (23-24), 3605-3608, 2011
46 2011 