M. O. Manasreh
M. O. Manasreh
U of A
E-mail confirmado em uark.edu
TítuloCitado porAno
Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band
DC Look, DC Walters, MO Manasreh, JR Sizelove, CE Stutz, KR Evans
Physical Review B 42 (6), 3578, 1990
3481990
Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 C: Observation of an EL2-like defect
MO Manasreh, DC Look, KR Evans, CE Stutz
Physical Review B 41 (14), 10272, 1990
1561990
Semiconductor heterojunctions and nanostructures
O Manasreh
McGraw-Hill, Inc., 2005
1502005
Semiconductor quantum wells and superlattices for long-wavelength infrared detectors
MO Manasreh
Artech House on Demand, 1993
1211993
Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy
J Wu, D Shao, VG Dorogan, AZ Li, S Li, EA DeCuir Jr, MO Manasreh, ...
Nano letters 10 (4), 1512-1516, 2010
1002010
Temperature dependence of the band gap of colloidal core/shell nanocrystals embedded into an ultraviolet curable resin
A Joshi, KY Narsingi, MO Manasreh, EA Davis, BD Weaver
Applied physics letters 89 (13), 131907, 2006
982006
Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition
MO Manasreh
Physical Review B 53 (24), 16425, 1996
971996
The EL2 defect in GaAs: Some recent developments
MO Manasreh, DW Fischer, WC Mitchel
physica status solidi (b) 154 (1), 11-41, 1989
861989
Surface plasmon enhanced intermediate band based quantum dots solar cell
J Wu, SC Mangham, VR Reddy, MO Manasreh, BD Weaver
Solar Energy Materials and Solar Cells 102, 44-49, 2012
802012
Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy
J Wu, Z Li, D Shao, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo, ...
Applied Physics Letters 94 (17), 171102, 2009
762009
Origin of the blueshift in the intersubband infrared absorption in GaAs/Al 0.3 Ga 0.7 As multiple quantum wells
MO Manasreh, F Szmulowicz, T Vaughan, KR Evans, CE Stutz, ...
Physical Review B 43 (12), 9996, 1991
701991
Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure
MO Manasreh, F Szmulowicz, DW Fischer, KR Evans, CE Stutz
Applied Physics Letters 57 (17), 1790-1792, 1990
691990
Intermediate-band material based on GaAs quantum rings for solar cells
J Wu, D Shao, Z Li, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo
Applied Physics Letters 95 (7), 071908, 2009
642009
III-V nitride semiconductors: Applications and devices
TY Edward
CRC Press, 2002
602002
Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells
I Lo, WC Mitchel, MO Manasreh, CE Stutz, KR Evans
Applied physics letters 60 (6), 751-753, 1992
561992
Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy
CR Abernathy, SJ Pearton, MO Manasreh, DW Fischer, DN Talwar
Applied Physics Letters 57 (3), 294-296, 1990
541990
Dual broadband photodetector based on interband and intersubband transitions in InAs quantum dots embedded in graded InGaAs quantum wells
BS Passmore, J Wu, MO Manasreh, GJ Salamo
Applied Physics Letters 91 (23), 233508, 2007
512007
Ion-beam-produced damage and its stability in AlN films
SO Kucheyev, JS Williams, J Zou, C Jagadish, M Pophristic, S Guo, ...
Journal of applied physics 92 (7), 3554-3558, 2002
472002
Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles
J Wu, S Lee, VR Reddy, MO Manasreh, BD Weaver, MK Yakes, ...
Materials Letters 65 (23-24), 3605-3608, 2011
422011
Photoreflectance and the electric fields in a GaAs depletion region
M Sydor, JR Engholm, MO Manasreh, CE Stutz, L Liou, KR Evans
Applied physics letters 56 (18), 1769-1771, 1990
421990
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