| Resistive switching properties through iodine migrations of a hybrid perovskite insulating layer DJ Kim, YJ Tak, WG Kim, JK Kim, JH Kim, HJ Kim Advanced Materials Interfaces 4 (6), 1601035, 2017 | 87 | 2017 |
| High-pressure gas activation for amorphous indium-gallium-zinc-oxide thin-film transistors at 100° C WG Kim, YJ Tak, B Du Ahn, TS Jung, KB Chung, HJ Kim Scientific reports 6 (1), 23039, 2016 | 86 | 2016 |
| Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In–Ga–Zn–O and CH3NH3PbI3 Films YJ Tak, DJ Kim, WG Kim, JH Lee, SJ Kim, JH Kim, HJ Kim ACS applied materials & interfaces 10 (15), 12854-12861, 2018 | 57 | 2018 |
| Improvement of electrical characteristics and stability of amorphous indium gallium zinc oxide thin film transistors using nitrocellulose passivation layer KY Shin, YJ Tak, WG Kim, S Hong, HJ Kim ACS Applied Materials & Interfaces 9 (15), 13278-13285, 2017 | 55 | 2017 |
| Simple hydrogen plasma doping process of amorphous indium gallium zinc oxide-based phototransistors for visible light detection BH Kang, WG Kim, J Chung, JH Lee, HJ Kim ACS applied materials & interfaces 10 (8), 7223-7230, 2018 | 53 | 2018 |
| High photosensitive indium–gallium–zinc oxide thin-film phototransistor with a selenium capping layer for visible-light detection H Yoo, WG Kim, BH Kang, HT Kim, JW Park, DH Choi, TS Kim, JH Lim, ... ACS applied materials & interfaces 12 (9), 10673-10680, 2020 | 49 | 2020 |
| Artificially fabricated subgap states for visible-light absorption in indium–gallium–zinc oxide phototransistor with solution-processed oxide absorption layer J Chung, YJ Tak, WG Kim, BH Kang, HJ Kim ACS applied materials & interfaces 11 (42), 38964-38972, 2019 | 38 | 2019 |
| Reduction of activation temperature at 150° C for IGZO films with improved electrical performance via UV-thermal treatment YJ Tak, SP Park, TS Jung, H Lee, WG Kim, JW Park, HJ Kim Journal of Information Display 17 (2), 73-78, 2016 | 34 | 2016 |
| Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process J Chung, YJ Tak, WG Kim, JW Park, TS Kim, JH Lim, HJ Kim Journal of Materials Chemistry C 6 (18), 4928-4935, 2018 | 33 | 2018 |
| Multifunctional, room-temperature processable, heterogeneous organic passivation layer for oxide semiconductor thin-film transistors YJ Tak, ST Keene, BH Kang, WG Kim, SJ Kim, A Salleo, HJ Kim ACS applied materials & interfaces 12 (2), 2615-2624, 2019 | 30 | 2019 |
| A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature H Yoo, YJ Tak, WG Kim, Y Kim, HJ Kim Journal of Materials Chemistry C 6 (23), 6187-6193, 2018 | 28 | 2018 |
| Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors Y Kim, YJ Tak, HJ Kim, WG Kim, H Yoo, HJ Kim Scientific reports 8 (1), 5546, 2018 | 27 | 2018 |
| Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors WG Kim, YJ Tak, HJ Kim Journal of information display 19 (1), 39-43, 2018 | 27 | 2018 |
| Low-temperature activation under 150° C for amorphous IGZO TFTs using voltage bias H Lee, KS Chang, YJ Tak, TS Jung, JW Park, WG Kim, J Chung, ... Journal of Information Display 18 (3), 131-135, 2017 | 24 | 2017 |
| Electric field-aided selective activation for indium-gallium-zinc-oxide thin film transistors H Lee, KS Chang, YJ Tak, TS Jung, JW Park, WG Kim, J Chung, ... Scientific reports 6 (1), 35044, 2016 | 22 | 2016 |
| Effect of static and rotating magnetic fields on low-temperature fabrication of InGaZnO thin-film transistors JW Park, YJ Tak, JW Na, H Lee, WG Kim, HJ Kim ACS applied materials & interfaces 10 (19), 16613-16622, 2018 | 16 | 2018 |
| High-Throughput Open-Air Plasma Activation of Metal-Oxide Thin Films with Low Thermal Budget YJ Tak, F Hilt, S Keene, WG Kim, RH Dauskardt, A Salleo, HJ Kim ACS applied materials & interfaces 10 (43), 37223-37232, 2018 | 14 | 2018 |
| Modified stoichiometry in homogeneous indium–zinc oxide system as vertically graded oxygen deficiencies by controlling redox reactions YJ Tak, YS Rim, DH Yoon, SJ Kim, SP Park, H Lee, WG Kim, Y Yang, ... Advanced Materials Interfaces 3 (4), 1500606, 2016 | 11 | 2016 |
| Photo-induced Reactive Oxygen Species Activation for Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite WG Kim, YJ Tak, H Yoo, HT Kim, JW Park, DH Choi, HJ Kim ACS Applied Materials & Interfaces 13 (37), 44531-44540, 2021 | 5 | 2021 |
| Semiconductor device and manufacturing method of the semiconductor device YJ Tak, TS Jung, WG Kim US Patent 11,201,214, 2021 | 3 | 2021 |
