| Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ... IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002 | 292 | 2002 |
| Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor C Brisset, V Ferlet-Cavrois, O Flament, O Musseau, JL Leray, JL Pelloie, ... IEEE Transactions on Nuclear Science 43 (6), 2651-2658, 1996 | 97 | 1996 |
| Modeling low-dose-rate effects in irradiated bipolar-base oxides RJ Graves, CR Cirba, RD Schrimpf, RJ Milanowski, A Michez, ... IEEE Transactions on Nuclear Science 45 (6), 2352-2360, 1998 | 88 | 1998 |
| Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO/sub 2 P Paillet, JL Touron, JL Leray, C Cirba, A Michez RADECS 97. Fourth European Conference on Radiation and its Effects on …, 1997 | 28 | 1997 |
| Thermal runaway in SiC Schottky barrier diodes caused by heavy ions S Kuboyama, E Mizuta, Y Nakada, H Shindou, A Michez, J Boch, ... IEEE Transactions on Nuclear Science 66 (7), 1688-1693, 2019 | 27 | 2019 |
| ECORCE: A TCAD tool for total ionizing dose and single event effect modeling A Michez, S Dhombres, J Boch IEEE Transactions on Nuclear Science 62 (4), 1516-1527, 2015 | 26 | 2015 |
| Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFET K Niskanen, AD Touboul, RC Germanicus, A Michez, A Javanainen, ... IEEE Transactions on Nuclear Science 67 (7), 1365-1373, 2020 | 22 | 2020 |
| Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET A Michez, J Boch, S Dhombres, F Saigné, AD Touboul, JR Vaillé, ... Microelectronics Reliability 53 (9-11), 1306-1310, 2013 | 18 | 2013 |
| Study of a thermal annealing approach for very high total dose environments S Dhombres, A Michez, J Boch, F Saigne, S Beauvivre, D Kraehenbuehl, ... IEEE Transactions on Nuclear Science 61 (6), 2923-2929, 2014 | 16 | 2014 |
| Anemometer based on Seebeck effect M Al Khalfioui, A Michez, A Giani, A Boyer, A Foucaran Sensors and Actuators A: Physical 107 (1), 36-41, 2003 | 15 | 2003 |
| Total ionizing dose effect in LDMOS oxides and devices T Borel, S Furic, E Leduc, A Michez, J Boch, A Touboul, B Azais, ... IEEE Transactions on Nuclear Science 66 (7), 1606-1611, 2019 | 14 | 2019 |
| Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model K Guetarni, AD Touboul, J Boch, L Foro, A Privat, A Michez, JR Vaillé, ... Microelectronics Reliability 53 (9-11), 1293-1299, 2013 | 14 | 2013 |
| Neutron-induced failure dependence on reverse gate voltage for SiC power MOSFETs in atmospheric environment K Niskanen, RC Germanicus, A Michez, F Wrobel, J Boch, F Saigné, ... IEEE Transactions on Nuclear Science 68 (8), 1623-1632, 2021 | 13 | 2021 |
| Dose rate switching technique on ELDRS-free bipolar devices J Boch, A Michez, M Rousselet, S Dhombres, AD Touboul, JR Vaille, ... IEEE Transactions on Nuclear Science 63 (4), 2065-2071, 2016 | 10 | 2016 |
| Post-irradiation-gate-stress on power MOSFETs: Quantification of latent defects-induced reliability degradation A Privat, AD Touboul, A Michez, S Bourdarie, JR Vaille, F Wrobel, ... IEEE Transactions on Nuclear Science 60 (6), 4166-4174, 2013 | 10 | 2013 |
| Gate voltage contribution to neutron-induced SEB of trench gate fieldstop IGBT LL Foro, AD Touboul, A Michez, F Wrobel, P Rech, L Dilillo, C Frost, ... IEEE Transactions on Nuclear Science 61 (4), 1739-1746, 2014 | 9 | 2014 |
| Radiation induced shift study in parasitic MOS structures by 2D numerical simulation R Escoffier, A Michez, G Cirba, G Bordure, V Ferlet-Cavrois, P Paillet, ... Proceedings of the Third European Conference on Radiation and its Effects on …, 1995 | 9 | 1995 |
| Anemometer based on Seebeck effect A Michez, A Giani, A Boyer, A Foucaran Sensors and Actuators A: Physical 107 (1), 36-41, 2003 | 8 | 2003 |
| Evaluation and analysis of technologies for robotic platforms for the nuclear decommissioning G Tsiligiannis, A Touboul, G Bricas, T Maraine, J Boch, F Wrobel, ... 2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 1-6, 2020 | 7 | 2020 |
| Failure analysis of atmospheric neutron-induced single event burnout of a commercial SiC MOSFET RC Germanicus, K Niskanen, A Michez, N Moultif, W Jouha, O Latry, ... Materials Science Forum 1062, 544-548, 2022 | 6 | 2022 |
