Antonio L P Rotondaro
Antonio L P Rotondaro
Tokyo Electron America
E-mail confirmado em us.tel.com
Título
Citado por
Citado por
Ano
Application of HfSiON as a gate dielectric material
MR Visokay, JJ Chambers, ALP Rotondaro, A Shanware, L Colombo
Applied Physics Letters 80 (17), 3183-3185, 2002
5342002
Annealing of high-k dielectric materials
ALP Rotondaro, MR Visokay, L Colombo
US Patent 6,544,906, 2003
2332003
Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing
MR Visokay, ALP Rotondaro, L Colombo
US Patent 6,696,332, 2004
2212004
Selective removal of TixNy
ALP Rotondaro
US Patent 5,948,702, 1999
1511999
35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS
PR Chidambaram, BA Smith, LH Hall, H Bu, S Chakravarthi, Y Kim, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 48-49, 2004
1422004
Advanced CMOS transistors with a novel HfSiON gate dielectric
ALP Rotondaro, MR Visokay, JJ Chambers, A Shanware, R Khamankar, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
1422002
Gate structure and method
MR Visokay, ALP Rotondaro, L Colombo
US Patent 7,105,891, 2006
1362006
Multiple work function gates
ALP Rotondaro, MR Visokay
US Patent 6,835,639, 2004
1332004
Gate dielectric and method
ALP Rotondaro, L Colombo, MJ Bevan
US Patent 6,919,251, 2005
1312005
High temperature interface layer growth for high-k gate dielectric
L Colombo, JJ Chambers, ALP Rotondaro, MR Visokay
US Patent 6,852,645, 2005
1222005
Anneal sequence for high-κ film property optimization
MR Visokay, L Colombo, ALP Rotondaro
US Patent 6,821,873, 2004
1132004
Gate structure and method
MM Eissa, ALP Rotondaro
US Patent 6,723,658, 2004
1092004
CMOS metal replacement gate transistors using tantalum pentoxide gate insulator
A Chatterjee, RA Chapman, K Joyner, M Otobe, S Hattangady, M Bevan, ...
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
1081998
Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process
A Chatterjee, RA Chapman, G Dixit, J Kuehne, S Hattangady, H Yang, ...
International Electron Devices Meeting. IEDM Technical Digest, 821-824, 1997
1081997
Reliability evaluation of HfSiON gate dielectric film with 12.8 A SiO2 equivalent thickness
A Shanware
Proceedings of IEDM Tech. Digest, 2001, 2001
1022001
Method for fabricating transistor gate structures and gate dielectrics thereof
MR Visokay, L Colombo, JJ Chambers, ALP Rotondaro, H Bu
US Patent 7,135,361, 2006
982006
Gate structure and method
MR Visokay, ALP Rotondaro, L Colombo
US Patent 6,797,599, 2004
952004
Characterization and comparison of the charge trapping in HfSiON and HfO2 gate dielectrics
A Shanware
Tech. Digest of IEDM, 2003, 2003
942003
Gate dielectric and method
MR Visokay, ALP Rotondaro, L Colombo
US Patent 7,018,902, 2006
922006
Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates
ALP Rotondaro, TQ Hurd, A Kaniava, J Vanhellemont, E Simoen, ...
Journal of the Electrochemical Society 143 (9), 3014, 1996
891996
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20